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48 GHz AlInAs/GaInAs heterojunction bipolar transistors

Publication ,  Journal Article
Mishra, UK; Jensen, JF; Rensch, DB; Brown, AS; Pierce, MW; McCray, LG; Kargodorian, TV; Hoefer, WS; Kastris, RE
Published in: Technical Digest International Electron Devices Meeting
December 1, 1988

The authors report on the DC and RF performance of self-aligned Al0.48In0.52As-Ga0.47In0.53As heterojunction bipolar transistors. The properties that make the AlInAns/GalnAs material system extremely attractive for heterojunction bipolar transistors are discussed. The epitaxial layer structure was grown by molecular beam epitaxy on semi-insulating InP. The device structure is shown in cross section. A large variety of heterojunction bipolar transistor devices with different emitter sizes and with different numbers of emitter fingers have been fabricated. The common emitter characteristics of a single 5-μm × 5-μm emitter are reported.

Duke Scholars

April S. Brown
Author April S. Brown Electrical and Computer Engineering

Published In

Technical Digest International Electron Devices Meeting

ISSN

0163-1918

Publication Date

December 1, 1988

Start / End Page

873 / 875
 

Citation

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Mishra, U. K., Jensen, J. F., Rensch, D. B., Brown, A. S., Pierce, M. W., McCray, L. G., … Kastris, R. E. (1988). 48 GHz AlInAs/GaInAs heterojunction bipolar transistors. Technical Digest International Electron Devices Meeting, 873–875.
Mishra, U. K., J. F. Jensen, D. B. Rensch, A. S. Brown, M. W. Pierce, L. G. McCray, T. V. Kargodorian, W. S. Hoefer, and R. E. Kastris. “48 GHz AlInAs/GaInAs heterojunction bipolar transistors.” Technical Digest International Electron Devices Meeting, December 1, 1988, 873–75.
Mishra UK, Jensen JF, Rensch DB, Brown AS, Pierce MW, McCray LG, et al. 48 GHz AlInAs/GaInAs heterojunction bipolar transistors. Technical Digest International Electron Devices Meeting. 1988 Dec 1;873–5.
Mishra, U. K., et al. “48 GHz AlInAs/GaInAs heterojunction bipolar transistors.” Technical Digest International Electron Devices Meeting, Dec. 1988, pp. 873–75.
Mishra UK, Jensen JF, Rensch DB, Brown AS, Pierce MW, McCray LG, Kargodorian TV, Hoefer WS, Kastris RE. 48 GHz AlInAs/GaInAs heterojunction bipolar transistors. Technical Digest International Electron Devices Meeting. 1988 Dec 1;873–875.

Published In

Technical Digest International Electron Devices Meeting

ISSN

0163-1918

Publication Date

December 1, 1988

Start / End Page

873 / 875