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25 GHz static frequency dividers in AlInAs-GaInAs HEMT technology.

Publication ,  Journal Article
Jensen, JF; Mishra, UK; Brown, AS; Beaubien, RS; Thompson, MA; Jelloian, LM
Published in: Digest of Technical Papers - IEEE International Solid-State Circuits Conference
December 1, 1988

The authors describe the ultrahigh-speed performance of static flip-flop divide-by-two circuits implemented in both buffered FET logic (BFL) and capacitively enhanced logic (CEL) families utilizing 0.2-μm gate-length Al.48In.52As-Ga.4 7In.53As high-electron-mobility transistors (HEMT) fabricated on InP substrates. The dividers were tested on-wafer using a probe station at 300°K temperature. The highest operating frequency at 25.4 GHz was achieved with a CEL divider. At this frequency the divider dissipated 63.8 mW. A BFL divider operated at 25.2 GHz with 450 mW power dissipation.

Duke Scholars

Published In

Digest of Technical Papers - IEEE International Solid-State Circuits Conference

ISSN

0193-6530

Publication Date

December 1, 1988

Volume

31

Start / End Page

268 / 269
 

Citation

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Jensen, J. F., Mishra, U. K., Brown, A. S., Beaubien, R. S., Thompson, M. A., & Jelloian, L. M. (1988). 25 GHz static frequency dividers in AlInAs-GaInAs HEMT technology. Digest of Technical Papers - IEEE International Solid-State Circuits Conference, 31, 268–269.
Jensen, J. F., U. K. Mishra, A. S. Brown, R. S. Beaubien, M. A. Thompson, and L. M. Jelloian. “25 GHz static frequency dividers in AlInAs-GaInAs HEMT technology.Digest of Technical Papers - IEEE International Solid-State Circuits Conference 31 (December 1, 1988): 268–69.
Jensen JF, Mishra UK, Brown AS, Beaubien RS, Thompson MA, Jelloian LM. 25 GHz static frequency dividers in AlInAs-GaInAs HEMT technology. Digest of Technical Papers - IEEE International Solid-State Circuits Conference. 1988 Dec 1;31:268–9.
Jensen, J. F., et al. “25 GHz static frequency dividers in AlInAs-GaInAs HEMT technology.Digest of Technical Papers - IEEE International Solid-State Circuits Conference, vol. 31, Dec. 1988, pp. 268–69.
Jensen JF, Mishra UK, Brown AS, Beaubien RS, Thompson MA, Jelloian LM. 25 GHz static frequency dividers in AlInAs-GaInAs HEMT technology. Digest of Technical Papers - IEEE International Solid-State Circuits Conference. 1988 Dec 1;31:268–269.

Published In

Digest of Technical Papers - IEEE International Solid-State Circuits Conference

ISSN

0193-6530

Publication Date

December 1, 1988

Volume

31

Start / End Page

268 / 269