LOW NOISE 0. 1- mu m GaAs MESFETS BY MBE.
Publication
, Journal Article
Mishra, UK; Beaubien, RS; Delaney, MJ; Brown, AS; Hackett, LH
Published in: undefined
December 1, 1987
It is demonstrated that by applying proper scaling techniques, high-performance 0. 1- mu m-gate-length GaAs MESFETs can be routinely fabricated. The noise performance of these devices compares favorably with that of state-of-the-art HEMT structures. The performance is limited at the present time by the parasitic device elements, namely, the source resistance, gate resistance, drain resistance, and output conductance. It is clear that using T-gate structures and further optimization of the epitaxial profiles will address these issues in the future.
Duke Scholars
Published In
undefined
Publication Date
December 1, 1987
Start / End Page
177 / 189
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Mishra, U. K., Beaubien, R. S., Delaney, M. J., Brown, A. S., & Hackett, L. H. (1987). LOW NOISE 0. 1- mu m GaAs MESFETS BY MBE. Undefined, 177–189.
Mishra, U. K., R. S. Beaubien, M. J. Delaney, A. S. Brown, and L. H. Hackett. “LOW NOISE 0. 1- mu m GaAs MESFETS BY MBE.” Undefined, December 1, 1987, 177–89.
Mishra UK, Beaubien RS, Delaney MJ, Brown AS, Hackett LH. LOW NOISE 0. 1- mu m GaAs MESFETS BY MBE. undefined. 1987 Dec 1;177–89.
Mishra, U. K., et al. “LOW NOISE 0. 1- mu m GaAs MESFETS BY MBE.” Undefined, Dec. 1987, pp. 177–89.
Mishra UK, Beaubien RS, Delaney MJ, Brown AS, Hackett LH. LOW NOISE 0. 1- mu m GaAs MESFETS BY MBE. undefined. 1987 Dec 1;177–189.
Published In
undefined
Publication Date
December 1, 1987
Start / End Page
177 / 189