THRESHOLD VOLTAGE INSTABILITY IN MOSFET's DUE TO CHANNEL HOT HOLE EMISSION.
Publication
, Journal Article
Fair, RB; Sun, RC
Published in: Technical Digest - International Electron Devices Meeting
January 1, 1980
Authors report a model to explain the observed degradations in MOSFET performance based upon channel hot hole emission.
Duke Scholars
Published In
Technical Digest - International Electron Devices Meeting
DOI
ISSN
0163-1918
Publication Date
January 1, 1980
Start / End Page
746 / 749
Citation
APA
Chicago
ICMJE
MLA
NLM
Fair, R. B., & Sun, R. C. (1980). THRESHOLD VOLTAGE INSTABILITY IN MOSFET's DUE TO CHANNEL HOT HOLE EMISSION. Technical Digest - International Electron Devices Meeting, 746–749. https://doi.org/10.1109/iedm.1980.189944
Fair, R. B., and R. C. Sun. “THRESHOLD VOLTAGE INSTABILITY IN MOSFET's DUE TO CHANNEL HOT HOLE EMISSION.” Technical Digest - International Electron Devices Meeting, January 1, 1980, 746–49. https://doi.org/10.1109/iedm.1980.189944.
Fair RB, Sun RC. THRESHOLD VOLTAGE INSTABILITY IN MOSFET's DUE TO CHANNEL HOT HOLE EMISSION. Technical Digest - International Electron Devices Meeting. 1980 Jan 1;746–9.
Fair, R. B., and R. C. Sun. “THRESHOLD VOLTAGE INSTABILITY IN MOSFET's DUE TO CHANNEL HOT HOLE EMISSION.” Technical Digest - International Electron Devices Meeting, Jan. 1980, pp. 746–49. Scopus, doi:10.1109/iedm.1980.189944.
Fair RB, Sun RC. THRESHOLD VOLTAGE INSTABILITY IN MOSFET's DUE TO CHANNEL HOT HOLE EMISSION. Technical Digest - International Electron Devices Meeting. 1980 Jan 1;746–749.
Published In
Technical Digest - International Electron Devices Meeting
DOI
ISSN
0163-1918
Publication Date
January 1, 1980
Start / End Page
746 / 749