Erratum: Band discontinuity measurements of the wafer bonded InGaAs/Si heterojunction (Applied Physics Letters (2007) 90 (222111))
Publication
, Journal Article
McKay, KS; Lu, FP; Kim, J; Yi, C; Brown, AS; Hawkins, AR
Published in: Applied Physics Letters
2012
Duke Scholars
Published In
Applied Physics Letters
DOI
ISSN
0003-6951
Publication Date
2012
Volume
100
Issue
12
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences
Citation
APA
Chicago
ICMJE
MLA
NLM
McKay, K. S., Lu, F. P., Kim, J., Yi, C., Brown, A. S., & Hawkins, A. R. (2012). Erratum: Band discontinuity measurements of the wafer bonded InGaAs/Si heterojunction (Applied Physics Letters (2007) 90 (222111)). Applied Physics Letters, 100(12). https://doi.org/10.1063/1.3696305
McKay, K. S., F. P. Lu, J. Kim, C. Yi, A. S. Brown, and A. R. Hawkins. “Erratum: Band discontinuity measurements of the wafer bonded InGaAs/Si heterojunction (Applied Physics Letters (2007) 90 (222111)).” Applied Physics Letters 100, no. 12 (2012). https://doi.org/10.1063/1.3696305.
McKay KS, Lu FP, Kim J, Yi C, Brown AS, Hawkins AR. Erratum: Band discontinuity measurements of the wafer bonded InGaAs/Si heterojunction (Applied Physics Letters (2007) 90 (222111)). Applied Physics Letters. 2012;100(12).
McKay, K. S., et al. “Erratum: Band discontinuity measurements of the wafer bonded InGaAs/Si heterojunction (Applied Physics Letters (2007) 90 (222111)).” Applied Physics Letters, vol. 100, no. 12, 2012. Scival, doi:10.1063/1.3696305.
McKay KS, Lu FP, Kim J, Yi C, Brown AS, Hawkins AR. Erratum: Band discontinuity measurements of the wafer bonded InGaAs/Si heterojunction (Applied Physics Letters (2007) 90 (222111)). Applied Physics Letters. 2012;100(12).
Published In
Applied Physics Letters
DOI
ISSN
0003-6951
Publication Date
2012
Volume
100
Issue
12
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences