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Band bending and adsorption/desorption kinetics on N-polar GaN surfaces

Publication ,  Journal Article
Choi, S; Kim, TH; Wu, P; Brown, A; Everitt, HO; Losurdo, M; Bruno, G
Published in: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
February 17, 2009

Highly reactive N-polar [000-1] GaN surfaces were analyzed using spectroscopic ellipsometry. Following exposure to air, observed changes in the pseudodielectric function near the GaN band edge indicate that surface contamination reduces the band bending. A subsequent Ga adsorption/desorption experiment on pristine N-polar GaN indicates that it contains a mixture of Ga-terminated and N-terminated surfaces. During deposition, Ga adatoms preferentially bond to the dangling bonds on the N-terminated surface: the measured 3.19 eV desorption activation energy equals the Ga-N decomposition energy. Further deposition forms a 1 ML Ga wetting layer whose 2.78 eV desorption activation energy is comparable to the Ga sublimation energy. © 2009 American Vacuum Society.

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Published In

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

DOI

ISSN

1071-1023

Publication Date

February 17, 2009

Volume

27

Issue

1

Start / End Page

107 / 112

Related Subject Headings

  • Applied Physics
  • 5104 Condensed matter physics
  • 4016 Materials engineering
  • 0912 Materials Engineering
  • 0901 Aerospace Engineering
  • 0401 Atmospheric Sciences
 

Citation

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ICMJE
MLA
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Choi, S., Kim, T. H., Wu, P., Brown, A., Everitt, H. O., Losurdo, M., & Bruno, G. (2009). Band bending and adsorption/desorption kinetics on N-polar GaN surfaces. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 27(1), 107–112. https://doi.org/10.1116/1.3054345
Choi, S., T. H. Kim, P. Wu, A. Brown, H. O. Everitt, M. Losurdo, and G. Bruno. “Band bending and adsorption/desorption kinetics on N-polar GaN surfaces.” Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 27, no. 1 (February 17, 2009): 107–12. https://doi.org/10.1116/1.3054345.
Choi S, Kim TH, Wu P, Brown A, Everitt HO, Losurdo M, et al. Band bending and adsorption/desorption kinetics on N-polar GaN surfaces. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2009 Feb 17;27(1):107–12.
Choi, S., et al. “Band bending and adsorption/desorption kinetics on N-polar GaN surfaces.” Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 27, no. 1, Feb. 2009, pp. 107–12. Scopus, doi:10.1116/1.3054345.
Choi S, Kim TH, Wu P, Brown A, Everitt HO, Losurdo M, Bruno G. Band bending and adsorption/desorption kinetics on N-polar GaN surfaces. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2009 Feb 17;27(1):107–112.

Published In

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

DOI

ISSN

1071-1023

Publication Date

February 17, 2009

Volume

27

Issue

1

Start / End Page

107 / 112

Related Subject Headings

  • Applied Physics
  • 5104 Condensed matter physics
  • 4016 Materials engineering
  • 0912 Materials Engineering
  • 0901 Aerospace Engineering
  • 0401 Atmospheric Sciences