Wu, B., Wheeler, D., Yi, C., Yoon, I., Jha, S., Brown, A., … Seabaugh, A. (2007). InAs growth on submicron (100) SOI islands for InAs-Si composite channel MOSFETs. 2007 International Semiconductor Device Research Symposium, ISDRS. https://doi.org/10.1109/ISDRS.2007.4422233

Wu, B., D. Wheeler, C. Yi, I. Yoon, S. Jha, A. Brown, T. Kuech, P. Fay, and A. Seabaugh. “InAs growth on submicron (100) SOI islands for InAs-Si composite channel MOSFETs.” 2007 International Semiconductor Device Research Symposium, ISDRS, December 1, 2007. https://doi.org/10.1109/ISDRS.2007.4422233.

Wu B, Wheeler D, Yi C, Yoon I, Jha S, Brown A, et al. InAs growth on submicron (100) SOI islands for InAs-Si composite channel MOSFETs. 2007 International Semiconductor Device Research Symposium, ISDRS. 2007 Dec 1;

Wu, B., et al. “InAs growth on submicron (100) SOI islands for InAs-Si composite channel MOSFETs.” 2007 International Semiconductor Device Research Symposium, ISDRS, Dec. 2007. Scopus, doi:10.1109/ISDRS.2007.4422233.

Wu B, Wheeler D, Yi C, Yoon I, Jha S, Brown A, Kuech T, Fay P, Seabaugh A. InAs growth on submicron (100) SOI islands for InAs-Si composite channel MOSFETs. 2007 International Semiconductor Device Research Symposium, ISDRS. 2007 Dec 1;