Characteristics of InN grown on SiC under the In-rich regime by molecular beam heteroepitaxy
Publication
, Journal Article
Losurdo, M; Giangregorio, MM; Bruno, G; Kim, TH; Wu, P; Choi, S; Brown, A; Masia, F; Capizzi, M; Polimeni, A
Published in: Applied Physics Letters
January 15, 2007
InN epitaxial films were grown by N2 plasma-assisted molecular beam epitaxy on 4H- and 6H-SiC substrates using low-temperature InN nucleation layers. InN films grown at various In fluxes under the In-rich regime show improved crystal quality, surface morphology, and optical properties, without sizable metallic In incorporation. Photoluminescence measurements show emission up to room temperature, band gap values as low as 0.64 eV at T=10 K, and carrier concentrations of the order of 8× 1017 cm-3. © 2007 American Institute of Physics.
Duke Scholars
Published In
Applied Physics Letters
DOI
ISSN
0003-6951
Publication Date
January 15, 2007
Volume
90
Issue
1
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences
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Losurdo, M., Giangregorio, M. M., Bruno, G., Kim, T. H., Wu, P., Choi, S., … Polimeni, A. (2007). Characteristics of InN grown on SiC under the In-rich regime by molecular beam heteroepitaxy. Applied Physics Letters, 90(1). https://doi.org/10.1063/1.2424664
Losurdo, M., M. M. Giangregorio, G. Bruno, T. H. Kim, P. Wu, S. Choi, A. Brown, F. Masia, M. Capizzi, and A. Polimeni. “Characteristics of InN grown on SiC under the In-rich regime by molecular beam heteroepitaxy.” Applied Physics Letters 90, no. 1 (January 15, 2007). https://doi.org/10.1063/1.2424664.
Losurdo M, Giangregorio MM, Bruno G, Kim TH, Wu P, Choi S, et al. Characteristics of InN grown on SiC under the In-rich regime by molecular beam heteroepitaxy. Applied Physics Letters. 2007 Jan 15;90(1).
Losurdo, M., et al. “Characteristics of InN grown on SiC under the In-rich regime by molecular beam heteroepitaxy.” Applied Physics Letters, vol. 90, no. 1, Jan. 2007. Scopus, doi:10.1063/1.2424664.
Losurdo M, Giangregorio MM, Bruno G, Kim TH, Wu P, Choi S, Brown A, Masia F, Capizzi M, Polimeni A. Characteristics of InN grown on SiC under the In-rich regime by molecular beam heteroepitaxy. Applied Physics Letters. 2007 Jan 15;90(1).
Published In
Applied Physics Letters
DOI
ISSN
0003-6951
Publication Date
January 15, 2007
Volume
90
Issue
1
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences