Nucleation and growth mode of the molecular beam epitaxy of GaN on 4H-SiC exploiting real time spectroscopic ellipsometry
Publication
, Journal Article
Losurdo, M; Bruno, G; Kim, TH; Choi, S; Brown, A; Moto, A
Published in: Journal of Crystal Growth
October 15, 2005
The heteroepitaxy of GaN directly grown directly on Si-face 4H-SiC(0 0 0 1) by molecular beam epitaxy is explored and characterized using in situ spectroscopic ellipsometry. Critical steps of the process, including SiC substrate cleaning, substrate termination through nitridation, GaN nucleation and growth, are monitored in real time. Some key relationships between growth mode, as observed by ellipsometry, and material properties are given. © 2005 Elsevier B.V. All rights reserved.
Duke Scholars
Published In
Journal of Crystal Growth
DOI
ISSN
0022-0248
Publication Date
October 15, 2005
Volume
284
Issue
1-2
Start / End Page
156 / 165
Related Subject Headings
- Applied Physics
- 4016 Materials engineering
- 3403 Macromolecular and materials chemistry
- 0912 Materials Engineering
- 0306 Physical Chemistry (incl. Structural)
- 0303 Macromolecular and Materials Chemistry
Citation
APA
Chicago
ICMJE
MLA
NLM
Losurdo, M., Bruno, G., Kim, T. H., Choi, S., Brown, A., & Moto, A. (2005). Nucleation and growth mode of the molecular beam epitaxy of GaN on 4H-SiC exploiting real time spectroscopic ellipsometry. Journal of Crystal Growth, 284(1–2), 156–165. https://doi.org/10.1016/j.jcrysgro.2005.07.016
Losurdo, M., G. Bruno, T. H. Kim, S. Choi, A. Brown, and A. Moto. “Nucleation and growth mode of the molecular beam epitaxy of GaN on 4H-SiC exploiting real time spectroscopic ellipsometry.” Journal of Crystal Growth 284, no. 1–2 (October 15, 2005): 156–65. https://doi.org/10.1016/j.jcrysgro.2005.07.016.
Losurdo M, Bruno G, Kim TH, Choi S, Brown A, Moto A. Nucleation and growth mode of the molecular beam epitaxy of GaN on 4H-SiC exploiting real time spectroscopic ellipsometry. Journal of Crystal Growth. 2005 Oct 15;284(1–2):156–65.
Losurdo, M., et al. “Nucleation and growth mode of the molecular beam epitaxy of GaN on 4H-SiC exploiting real time spectroscopic ellipsometry.” Journal of Crystal Growth, vol. 284, no. 1–2, Oct. 2005, pp. 156–65. Scopus, doi:10.1016/j.jcrysgro.2005.07.016.
Losurdo M, Bruno G, Kim TH, Choi S, Brown A, Moto A. Nucleation and growth mode of the molecular beam epitaxy of GaN on 4H-SiC exploiting real time spectroscopic ellipsometry. Journal of Crystal Growth. 2005 Oct 15;284(1–2):156–165.
Published In
Journal of Crystal Growth
DOI
ISSN
0022-0248
Publication Date
October 15, 2005
Volume
284
Issue
1-2
Start / End Page
156 / 165
Related Subject Headings
- Applied Physics
- 4016 Materials engineering
- 3403 Macromolecular and materials chemistry
- 0912 Materials Engineering
- 0306 Physical Chemistry (incl. Structural)
- 0303 Macromolecular and Materials Chemistry