Interfacial reactions during GaN and AiN epitaxy on 4H- and 6H-SiC(0001)
Publication
, Journal Article
Losurdo, M; Capezzuto, P; Bruno, G; Brown, A; Kim, TH; Yi, C; Zakharov, DN; Liliental-Weber, Z
Published in: Applied Physics Letters
January 10, 2005
Thin layers of AlN and GaN have been grown by plasma-assisted molecular beam epitaxy on Si-face 4H- and 6H- SiC (0001)Si substrates. The impact of the SiC surface preparation and oxide removal via a Ga deposition and desorption process on the chemistry and structure of the GaN/SiC and AlN/SiC interfaces, and on the GaN/SiC subsurface reactivity is characterized. We also investigate the impact of this process on growth mode evolution. © 2005 American Institute of Physics.
Duke Scholars
Published In
Applied Physics Letters
DOI
ISSN
0003-6951
Publication Date
January 10, 2005
Volume
86
Issue
2
Start / End Page
1 / 21920
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences
Citation
APA
Chicago
ICMJE
MLA
NLM
Losurdo, M., Capezzuto, P., Bruno, G., Brown, A., Kim, T. H., Yi, C., … Liliental-Weber, Z. (2005). Interfacial reactions during GaN and AiN epitaxy on 4H- and 6H-SiC(0001). Applied Physics Letters, 86(2), 1–21920. https://doi.org/10.1063/1.1852703
Losurdo, M., P. Capezzuto, G. Bruno, A. Brown, T. H. Kim, C. Yi, D. N. Zakharov, and Z. Liliental-Weber. “Interfacial reactions during GaN and AiN epitaxy on 4H- and 6H-SiC(0001).” Applied Physics Letters 86, no. 2 (January 10, 2005): 1–21920. https://doi.org/10.1063/1.1852703.
Losurdo M, Capezzuto P, Bruno G, Brown A, Kim TH, Yi C, et al. Interfacial reactions during GaN and AiN epitaxy on 4H- and 6H-SiC(0001). Applied Physics Letters. 2005 Jan 10;86(2):1–21920.
Losurdo, M., et al. “Interfacial reactions during GaN and AiN epitaxy on 4H- and 6H-SiC(0001).” Applied Physics Letters, vol. 86, no. 2, Jan. 2005, pp. 1–21920. Scopus, doi:10.1063/1.1852703.
Losurdo M, Capezzuto P, Bruno G, Brown A, Kim TH, Yi C, Zakharov DN, Liliental-Weber Z. Interfacial reactions during GaN and AiN epitaxy on 4H- and 6H-SiC(0001). Applied Physics Letters. 2005 Jan 10;86(2):1–21920.
Published In
Applied Physics Letters
DOI
ISSN
0003-6951
Publication Date
January 10, 2005
Volume
86
Issue
2
Start / End Page
1 / 21920
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences