Study of the interaction of 4H-SiC and 6H-SiC(0001)Si surfaces with atomic nitrogen
Publication
, Journal Article
Losurdo, M; Giangregorio, MM; Bruno, G; Brown, A; Kim, TH
Published in: Applied Physics Letters
November 1, 2004
The interaction of atomic nitrogen with 4H- and 6H-SiC(0001) Si-face surfaces is investigated. Clean and atomically smooth terraced surfaces obtained by in situ cleaning using atomic hydrogen have been exposed at 200°C and 750°C to atomic nitrogen produced by a if remote N2 plasma. Spectroscopic ellipsometry is used for real-time monitoring of the kinetics of SiC surface modifications, and determining the thickness and properties of the nitrided layer. Surface potential measurements reveal the band bending of the nitrided SiC surface. An improvement in the heteroepitaxy of GaN on the low-temperature nitrided SiC surface is found. © 2004 American Institute of Physics.
Duke Scholars
Published In
Applied Physics Letters
DOI
ISSN
0003-6951
Publication Date
November 1, 2004
Volume
85
Issue
18
Start / End Page
4034 / 4036
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences
Citation
APA
Chicago
ICMJE
MLA
NLM
Losurdo, M., Giangregorio, M. M., Bruno, G., Brown, A., & Kim, T. H. (2004). Study of the interaction of 4H-SiC and 6H-SiC(0001)Si surfaces with atomic nitrogen. Applied Physics Letters, 85(18), 4034–4036. https://doi.org/10.1063/1.1814438
Losurdo, M., M. M. Giangregorio, G. Bruno, A. Brown, and T. H. Kim. “Study of the interaction of 4H-SiC and 6H-SiC(0001)Si surfaces with atomic nitrogen.” Applied Physics Letters 85, no. 18 (November 1, 2004): 4034–36. https://doi.org/10.1063/1.1814438.
Losurdo M, Giangregorio MM, Bruno G, Brown A, Kim TH. Study of the interaction of 4H-SiC and 6H-SiC(0001)Si surfaces with atomic nitrogen. Applied Physics Letters. 2004 Nov 1;85(18):4034–6.
Losurdo, M., et al. “Study of the interaction of 4H-SiC and 6H-SiC(0001)Si surfaces with atomic nitrogen.” Applied Physics Letters, vol. 85, no. 18, Nov. 2004, pp. 4034–36. Scopus, doi:10.1063/1.1814438.
Losurdo M, Giangregorio MM, Bruno G, Brown A, Kim TH. Study of the interaction of 4H-SiC and 6H-SiC(0001)Si surfaces with atomic nitrogen. Applied Physics Letters. 2004 Nov 1;85(18):4034–4036.
Published In
Applied Physics Letters
DOI
ISSN
0003-6951
Publication Date
November 1, 2004
Volume
85
Issue
18
Start / End Page
4034 / 4036
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences