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Study of the interaction of 4H-SiC and 6H-SiC(0001)Si surfaces with atomic nitrogen

Publication ,  Journal Article
Losurdo, M; Giangregorio, MM; Bruno, G; Brown, A; Kim, TH
Published in: Applied Physics Letters
November 1, 2004
Published version (DOI)

The interaction of atomic nitrogen with 4H- and 6H-SiC(0001) Si-face surfaces is investigated. Clean and atomically smooth terraced surfaces obtained by in situ cleaning using atomic hydrogen have been exposed at 200°C and 750°C to atomic nitrogen produced by a if remote N2 plasma. Spectroscopic ellipsometry is used for real-time monitoring of the kinetics of SiC surface modifications, and determining the thickness and properties of the nitrided layer. Surface potential measurements reveal the band bending of the nitrided SiC surface. An improvement in the heteroepitaxy of GaN on the low-temperature nitrided SiC surface is found. © 2004 American Institute of Physics.

Duke Scholars

April S. Brown
Author April S. Brown Electrical and Computer Engineering

Published In

Applied Physics Letters

DOI

10.1063/1.1814438

ISSN

0003-6951

Publication Date

November 1, 2004

Volume

85

Issue

18

Start / End Page

4034 / 4036

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 40 Engineering
  • 10 Technology
  • 09 Engineering
  • 02 Physical Sciences
 

Citation

APA
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ICMJE
MLA
NLM
Losurdo, M., Giangregorio, M. M., Bruno, G., Brown, A., & Kim, T. H. (2004). Study of the interaction of 4H-SiC and 6H-SiC(0001)Si surfaces with atomic nitrogen. Applied Physics Letters, 85(18), 4034–4036. https://doi.org/10.1063/1.1814438
Losurdo, M., M. M. Giangregorio, G. Bruno, A. Brown, and T. H. Kim. “Study of the interaction of 4H-SiC and 6H-SiC(0001)Si surfaces with atomic nitrogen.” Applied Physics Letters 85, no. 18 (November 1, 2004): 4034–36. https://doi.org/10.1063/1.1814438.
Losurdo M, Giangregorio MM, Bruno G, Brown A, Kim TH. Study of the interaction of 4H-SiC and 6H-SiC(0001)Si surfaces with atomic nitrogen. Applied Physics Letters. 2004 Nov 1;85(18):4034–6.
Losurdo, M., et al. “Study of the interaction of 4H-SiC and 6H-SiC(0001)Si surfaces with atomic nitrogen.” Applied Physics Letters, vol. 85, no. 18, Nov. 2004, pp. 4034–36. Scopus, doi:10.1063/1.1814438.
Losurdo M, Giangregorio MM, Bruno G, Brown A, Kim TH. Study of the interaction of 4H-SiC and 6H-SiC(0001)Si surfaces with atomic nitrogen. Applied Physics Letters. 2004 Nov 1;85(18):4034–4036.

Published In

Applied Physics Letters

DOI

10.1063/1.1814438

ISSN

0003-6951

Publication Date

November 1, 2004

Volume

85

Issue

18

Start / End Page

4034 / 4036

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 40 Engineering
  • 10 Technology
  • 09 Engineering
  • 02 Physical Sciences