Alternative substrates for InP and related materials

The transfer and separation of device layers or even finished device structures from a III-V substrate allows can lead to higher utilization of bulk wafer and the incorporation of multiple materials onto a single larger wafer. Depending on thethermal budget of the post-bonding process, low-cost, highly thermally conductive yet insulating substrates, such as poly-crystalline AlN, can be used provide a large area low-cost platform that has improved thermal management over the bulk substrate. This technology will be described and the limitations on the choice of bonding materials, process, and thermal history are discussed.

Duke Scholars

Author April S. Brown Electrical and Computer Engineering