A chemical perspective of GaN polarity: The use of hydrogen plasma dry etching versus NaOH wet etching to determine polarity
Publication
, Journal Article
Losurdo, M; Giangregorio, MM; Capezzuto, P; Bruno, G; Namkoong, G; Alan Doolittle, W; Brown, AS
Published in: Materials Research Society Symposium - Proceedings
January 1, 2002
The use of dry hydrogen plasma etching is evaluated for determination of GaN polarity and critically compared to wet etching in NaOH. It is shown that hydrogen plasma etching is effective in revealing inversion domains (IDs) and some types of dislocations. This is because the surface morphology is unchanged by the hydrogen treatment, and, hence, the surface reactivity is not masked.
Duke Scholars
Published In
Materials Research Society Symposium - Proceedings
DOI
ISSN
0272-9172
Publication Date
January 1, 2002
Volume
722
Start / End Page
103 / 108
Citation
APA
Chicago
ICMJE
MLA
NLM
Losurdo, M., Giangregorio, M. M., Capezzuto, P., Bruno, G., Namkoong, G., Alan Doolittle, W., & Brown, A. S. (2002). A chemical perspective of GaN polarity: The use of hydrogen plasma dry etching versus NaOH wet etching to determine polarity. Materials Research Society Symposium - Proceedings, 722, 103–108. https://doi.org/10.1557/proc-722-k3.4
Losurdo, M., M. M. Giangregorio, P. Capezzuto, G. Bruno, G. Namkoong, W. Alan Doolittle, and A. S. Brown. “A chemical perspective of GaN polarity: The use of hydrogen plasma dry etching versus NaOH wet etching to determine polarity.” Materials Research Society Symposium - Proceedings 722 (January 1, 2002): 103–8. https://doi.org/10.1557/proc-722-k3.4.
Losurdo M, Giangregorio MM, Capezzuto P, Bruno G, Namkoong G, Alan Doolittle W, et al. A chemical perspective of GaN polarity: The use of hydrogen plasma dry etching versus NaOH wet etching to determine polarity. Materials Research Society Symposium - Proceedings. 2002 Jan 1;722:103–8.
Losurdo, M., et al. “A chemical perspective of GaN polarity: The use of hydrogen plasma dry etching versus NaOH wet etching to determine polarity.” Materials Research Society Symposium - Proceedings, vol. 722, Jan. 2002, pp. 103–08. Scopus, doi:10.1557/proc-722-k3.4.
Losurdo M, Giangregorio MM, Capezzuto P, Bruno G, Namkoong G, Alan Doolittle W, Brown AS. A chemical perspective of GaN polarity: The use of hydrogen plasma dry etching versus NaOH wet etching to determine polarity. Materials Research Society Symposium - Proceedings. 2002 Jan 1;722:103–108.
Published In
Materials Research Society Symposium - Proceedings
DOI
ISSN
0272-9172
Publication Date
January 1, 2002
Volume
722
Start / End Page
103 / 108