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The growth of AlGaAs-InGaAs quantum-well structures by molecular beam epitaxy: Observation of critical interdependent effects

Publication ,  Journal Article
Bicknell-Tassius, RN; Lee, K; Brown, AS; Dagnall, G; May, G
Published in: Applied Physics Letters
January 6, 1997
Published version (DOI)

Critical interdependent effects have been observed in the growth of AlGaAs/InGaAs quantum-well structures by molecular beam epitaxy. It is shown that statistical experimental design is an effective method for quickly optimizing complex device structures. This technique is very useful for the optimization of processes with a large number of interdependent parameters, and allows for the clear visualization and separation of complex interwoven effects. In the present work, we show the importance of the oxide desorption process for the optimal growth of AlGaAs-containing structures. © 1997 American Institute of Physics.

Duke Scholars

April S. Brown
Author April S. Brown Electrical and Computer Engineering

Published In

Applied Physics Letters

DOI

10.1063/1.119303

ISSN

0003-6951

Publication Date

January 6, 1997

Volume

70

Issue

1

Start / End Page

52 / 54

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 40 Engineering
  • 10 Technology
  • 09 Engineering
  • 02 Physical Sciences
 

Citation

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ICMJE
MLA
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Bicknell-Tassius, R. N., Lee, K., Brown, A. S., Dagnall, G., & May, G. (1997). The growth of AlGaAs-InGaAs quantum-well structures by molecular beam epitaxy: Observation of critical interdependent effects. Applied Physics Letters, 70(1), 52–54. https://doi.org/10.1063/1.119303
Bicknell-Tassius, R. N., K. Lee, A. S. Brown, G. Dagnall, and G. May. “The growth of AlGaAs-InGaAs quantum-well structures by molecular beam epitaxy: Observation of critical interdependent effects.” Applied Physics Letters 70, no. 1 (January 6, 1997): 52–54. https://doi.org/10.1063/1.119303.
Bicknell-Tassius RN, Lee K, Brown AS, Dagnall G, May G. The growth of AlGaAs-InGaAs quantum-well structures by molecular beam epitaxy: Observation of critical interdependent effects. Applied Physics Letters. 1997 Jan 6;70(1):52–4.
Bicknell-Tassius, R. N., et al. “The growth of AlGaAs-InGaAs quantum-well structures by molecular beam epitaxy: Observation of critical interdependent effects.” Applied Physics Letters, vol. 70, no. 1, Jan. 1997, pp. 52–54. Scopus, doi:10.1063/1.119303.
Bicknell-Tassius RN, Lee K, Brown AS, Dagnall G, May G. The growth of AlGaAs-InGaAs quantum-well structures by molecular beam epitaxy: Observation of critical interdependent effects. Applied Physics Letters. 1997 Jan 6;70(1):52–54.

Published In

Applied Physics Letters

DOI

10.1063/1.119303

ISSN

0003-6951

Publication Date

January 6, 1997

Volume

70

Issue

1

Start / End Page

52 / 54

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 40 Engineering
  • 10 Technology
  • 09 Engineering
  • 02 Physical Sciences