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GaAs MESFET digital integrated circuits fabricated with low temperature buffer technology

Publication ,  Journal Article
Delaney, MJ; Chou, CS; Larson, LE; Jensen, JF; Deakin, DS; Brown, AS; Hooper, WW; Thompson, MA; McCray, LG; Rosenbaum, SE
Published in: Proceedings of the Custom Integrated Circuits Conference
May 1, 1989

High-performance digital integrated circuits have been fabricated with low-temperature buffer GaAs MESFET technology. The materials structure eliminates side-gating and light sensitivity, and improves FET performance. Individual transistors with a 0.2-μm gate length have a gm of 600 mS/mm and an extrapolated fT of 80 GHz. Static SCFL frequency dividers fabricated in this technology exhibit a maximum clock rate of 22 GHz.

Duke Scholars

April S. Brown
Author April S. Brown Electrical and Computer Engineering

Published In

Proceedings of the Custom Integrated Circuits Conference

ISSN

0886-5930

Publication Date

May 1, 1989

Start / End Page

18.3/1 / 18.3/4
 

Citation

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Delaney, M. J., Chou, C. S., Larson, L. E., Jensen, J. F., Deakin, D. S., Brown, A. S., … Rosenbaum, S. E. (1989). GaAs MESFET digital integrated circuits fabricated with low temperature buffer technology. Proceedings of the Custom Integrated Circuits Conference, 18.3/1-18.3/4.
Delaney, M. J., C. S. Chou, L. E. Larson, J. F. Jensen, D. S. Deakin, A. S. Brown, W. W. Hooper, M. A. Thompson, L. G. McCray, and S. E. Rosenbaum. “GaAs MESFET digital integrated circuits fabricated with low temperature buffer technology.” Proceedings of the Custom Integrated Circuits Conference, May 1, 1989, 18.3/1-18.3/4.
Delaney MJ, Chou CS, Larson LE, Jensen JF, Deakin DS, Brown AS, et al. GaAs MESFET digital integrated circuits fabricated with low temperature buffer technology. Proceedings of the Custom Integrated Circuits Conference. 1989 May 1;18.3/1-18.3/4.
Delaney, M. J., et al. “GaAs MESFET digital integrated circuits fabricated with low temperature buffer technology.” Proceedings of the Custom Integrated Circuits Conference, May 1989, pp. 18.3/1-18.3/4.
Delaney MJ, Chou CS, Larson LE, Jensen JF, Deakin DS, Brown AS, Hooper WW, Thompson MA, McCray LG, Rosenbaum SE. GaAs MESFET digital integrated circuits fabricated with low temperature buffer technology. Proceedings of the Custom Integrated Circuits Conference. 1989 May 1;18.3/1-18.3/4.

Published In

Proceedings of the Custom Integrated Circuits Conference

ISSN

0886-5930

Publication Date

May 1, 1989

Start / End Page

18.3/1 / 18.3/4