
Spatial localization of Si in selectively δ-doped Alx Ga1-x As/GaAs heterostructures for high mobility and density realization
Publication
, Journal Article
Cunningham, JE; Timp, G; Chang, AM; Chiu, TH; Jan, W; Schubert, EF; Tsung, WT
Published in: Journal of Crystal Growth
February 2, 1989
We report on a new type of structure formed by δ-doping the barrier of an AlxGa1-xAs/GaAs heterostructure. We investigate transport in these structures which reveal that very high quality fractional quantum hall structure occurs as well as systematically high density and mobility (2.2×106 cm2/V·s). The dependence of mobility and density on spacer layer thickness is explored. We show that the observed improvements in 2DEG properties are expected from the spatial localization of the Si dopant. © 1989.
Duke Scholars
Published In
Journal of Crystal Growth
DOI
ISSN
0022-0248
Publication Date
February 2, 1989
Volume
95
Issue
1-4
Start / End Page
253 / 256
Related Subject Headings
- Applied Physics
- 4016 Materials engineering
- 3403 Macromolecular and materials chemistry
- 0912 Materials Engineering
- 0306 Physical Chemistry (incl. Structural)
- 0303 Macromolecular and Materials Chemistry
Citation
APA
Chicago
ICMJE
MLA
NLM
Cunningham, J. E., Timp, G., Chang, A. M., Chiu, T. H., Jan, W., Schubert, E. F., & Tsung, W. T. (1989). Spatial localization of Si in selectively δ-doped Alx Ga1-x As/GaAs heterostructures for high mobility and density realization. Journal of Crystal Growth, 95(1–4), 253–256. https://doi.org/10.1016/0022-0248(89)90395-3
Cunningham, J. E., G. Timp, A. M. Chang, T. H. Chiu, W. Jan, E. F. Schubert, and W. T. Tsung. “Spatial localization of Si in selectively δ-doped Alx Ga1-x As/GaAs heterostructures for high mobility and density realization.” Journal of Crystal Growth 95, no. 1–4 (February 2, 1989): 253–56. https://doi.org/10.1016/0022-0248(89)90395-3.
Cunningham JE, Timp G, Chang AM, Chiu TH, Jan W, Schubert EF, et al. Spatial localization of Si in selectively δ-doped Alx Ga1-x As/GaAs heterostructures for high mobility and density realization. Journal of Crystal Growth. 1989 Feb 2;95(1–4):253–6.
Cunningham, J. E., et al. “Spatial localization of Si in selectively δ-doped Alx Ga1-x As/GaAs heterostructures for high mobility and density realization.” Journal of Crystal Growth, vol. 95, no. 1–4, Feb. 1989, pp. 253–56. Scopus, doi:10.1016/0022-0248(89)90395-3.
Cunningham JE, Timp G, Chang AM, Chiu TH, Jan W, Schubert EF, Tsung WT. Spatial localization of Si in selectively δ-doped Alx Ga1-x As/GaAs heterostructures for high mobility and density realization. Journal of Crystal Growth. 1989 Feb 2;95(1–4):253–256.

Published In
Journal of Crystal Growth
DOI
ISSN
0022-0248
Publication Date
February 2, 1989
Volume
95
Issue
1-4
Start / End Page
253 / 256
Related Subject Headings
- Applied Physics
- 4016 Materials engineering
- 3403 Macromolecular and materials chemistry
- 0912 Materials Engineering
- 0306 Physical Chemistry (incl. Structural)
- 0303 Macromolecular and Materials Chemistry