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Spatial localization of Si in selectively δ-doped AlxGa1-xAs/GaAs heterostructures for high mobility and density realization

Publication ,  Journal Article
Cunningham, JE; Timp, G; Chang, AM; Chiu, TH; Jan, W; Schubert, EF; Tsung, WT
Published in: Journal of Crystal Growth
February 2, 1989
Published version (DOI)

We report on a new type of structure formed by δ-doping the barrier of an AlxGa1-xAs/GaAs heterostructure. We investigate transport in these structures which reveal that very high quality fractional quantum hall structure occurs as well as systematically high density and mobility (2.2×106 cm2/V·s). The dependence of mobility and density on spacer layer thickness is explored. We show that the observed improvements in 2DEG properties are expected from the spatial localization of the Si dopant. © 1989.

Duke Scholars

Albert M. Chang
Author Albert M. Chang Physics

Published In

Journal of Crystal Growth

DOI

10.1016/0022-0248(89)90395-3

ISSN

0022-0248

Publication Date

February 2, 1989

Volume

95

Issue

1-4

Start / End Page

253 / 256

Related Subject Headings

  • Applied Physics
  • 4016 Materials engineering
  • 3403 Macromolecular and materials chemistry
  • 0912 Materials Engineering
  • 0306 Physical Chemistry (incl. Structural)
  • 0303 Macromolecular and Materials Chemistry
 

Citation

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Chicago
ICMJE
MLA
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Cunningham, J. E., Timp, G., Chang, A. M., Chiu, T. H., Jan, W., Schubert, E. F., & Tsung, W. T. (1989). Spatial localization of Si in selectively δ-doped AlxGa1-xAs/GaAs heterostructures for high mobility and density realization. Journal of Crystal Growth, 95(1–4), 253–256. https://doi.org/10.1016/0022-0248(89)90395-3
Cunningham, J. E., G. Timp, A. M. Chang, T. H. Chiu, W. Jan, E. F. Schubert, and W. T. Tsung. “Spatial localization of Si in selectively δ-doped AlxGa1-xAs/GaAs heterostructures for high mobility and density realization.” Journal of Crystal Growth 95, no. 1–4 (February 2, 1989): 253–56. https://doi.org/10.1016/0022-0248(89)90395-3.
Cunningham JE, Timp G, Chang AM, Chiu TH, Jan W, Schubert EF, et al. Spatial localization of Si in selectively δ-doped AlxGa1-xAs/GaAs heterostructures for high mobility and density realization. Journal of Crystal Growth. 1989 Feb 2;95(1–4):253–6.
Cunningham, J. E., et al. “Spatial localization of Si in selectively δ-doped AlxGa1-xAs/GaAs heterostructures for high mobility and density realization.” Journal of Crystal Growth, vol. 95, no. 1–4, Feb. 1989, pp. 253–56. Scopus, doi:10.1016/0022-0248(89)90395-3.
Cunningham JE, Timp G, Chang AM, Chiu TH, Jan W, Schubert EF, Tsung WT. Spatial localization of Si in selectively δ-doped AlxGa1-xAs/GaAs heterostructures for high mobility and density realization. Journal of Crystal Growth. 1989 Feb 2;95(1–4):253–256.
Journal cover image

Published In

Journal of Crystal Growth

DOI

10.1016/0022-0248(89)90395-3

ISSN

0022-0248

Publication Date

February 2, 1989

Volume

95

Issue

1-4

Start / End Page

253 / 256

Related Subject Headings

  • Applied Physics
  • 4016 Materials engineering
  • 3403 Macromolecular and materials chemistry
  • 0912 Materials Engineering
  • 0306 Physical Chemistry (incl. Structural)
  • 0303 Macromolecular and Materials Chemistry