Unified model of boron diffusion in thin gate oxides: effects of F, H2, N, oxide thickness and injected Si interstitials

This work is describes the first unified network-defect-level model for B diffusion in SiO2 for use in process simulation. Models have been developed to explain silicon processing effects on B diffusion through thin gate oxides. With these models we can predict the enhanced B diffusion effects in poly Si/SiO2 structures from BF2 implants, wet oxidation and exposure to H2 ambients, and the concentration of N in nitrided oxides in reducing B diffusion. We have also shown for the first time that there is an oxide thickness dependence on B diffusion.

Duke Scholars

Author Richard B. Fair Electrical and Computer Engineering