Junction formation in silicon by rapid thermal annealing
Publication
, Journal Article
Fair, RB
Published in: Materials Research Society Symposium Proceedings
January 1, 1993
The feasibility of using isothermal RTA in annealing ion implanted layers for forming junctions has been investigated for the past 10 years. While many of the scientific details surrounding defect formation, transient diffusion and dopant activation remain to be clarified, RTA intrinsically is a viable annealing process which is essential for fabricating advanced silicon devices.
Duke Scholars
Published In
Materials Research Society Symposium Proceedings
DOI
ISSN
0272-9172
Publication Date
January 1, 1993
Volume
300
Start / End Page
545 / 558
Citation
APA
Chicago
ICMJE
MLA
NLM
Fair, R. B. (1993). Junction formation in silicon by rapid thermal annealing. Materials Research Society Symposium Proceedings, 300, 545–558. https://doi.org/10.1557/proc-300-545
Fair, R. B. “Junction formation in silicon by rapid thermal annealing.” Materials Research Society Symposium Proceedings 300 (January 1, 1993): 545–58. https://doi.org/10.1557/proc-300-545.
Fair RB. Junction formation in silicon by rapid thermal annealing. Materials Research Society Symposium Proceedings. 1993 Jan 1;300:545–58.
Fair, R. B. “Junction formation in silicon by rapid thermal annealing.” Materials Research Society Symposium Proceedings, vol. 300, Jan. 1993, pp. 545–58. Scopus, doi:10.1557/proc-300-545.
Fair RB. Junction formation in silicon by rapid thermal annealing. Materials Research Society Symposium Proceedings. 1993 Jan 1;300:545–558.
Published In
Materials Research Society Symposium Proceedings
DOI
ISSN
0272-9172
Publication Date
January 1, 1993
Volume
300
Start / End Page
545 / 558