DEEP DECISION TREE APPROACH TO MODELING SUBMICRON SILICON TECHNOLOGIES.

A robust, accurate process simulator, PREDICT 1. 1, has been written that is based on tightly coupled simulation models. Model coupling is accounted for by using an internal decision tree that activates models on the basis of prior wafer processing. Thus, residual damage or dopants created by previous steps are accounted for and are important in the selection of appropriate process models. Submicrometer-technology modeling demands this kind of attention to detail, with crystal damage being the major process variable. Activated damage removal is calculated during the simulation so that self-interstitial-rich or vacancy-rich regions can be monitored for their impact on dopant diffusion.

Duke Scholars

Author Richard B. Fair Electrical and Computer Engineering