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Self-consistent mosfet tunneling simulations-trends in the gate and substrate currents and the drain-current turnaround effect with oxide scaling

Publication ,  Journal Article
Massoud, HZ; Shiely, JP; Shanware, A
Published in: Materials Research Society Symposium - Proceedings
January 1, 1999

This paper discusses the simulation needs of deep-submicron MOSFETs beyond the 100 nm technology generation where the tunneling of carriers through the gate dielectric will become a vital issue in device design, optimization, and characterization. We present simulation results of Tunnel-PISCES, a MOSFET device simulator where tunneling in the gate dielectric is implemented in a self-consistent manner with the device equations in the substrate. Simulation results of trends in the gate, substrate, and drain currents with oxide scaling are presented. The drain-current turnaround effect is explained by considering the role of the voltage drop across the polysilicon gate resistance in determining the device gate tunneling conditions. © 1999 Materials Research Society.

Duke Scholars

Published In

Materials Research Society Symposium - Proceedings

DOI

ISSN

0272-9172

Publication Date

January 1, 1999

Volume

567

Start / End Page

227 / 239
 

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Massoud, H. Z., Shiely, J. P., & Shanware, A. (1999). Self-consistent mosfet tunneling simulations-trends in the gate and substrate currents and the drain-current turnaround effect with oxide scaling. Materials Research Society Symposium - Proceedings, 567, 227–239. https://doi.org/10.1557/proc-567-227
Massoud, H. Z., J. P. Shiely, and A. Shanware. “Self-consistent mosfet tunneling simulations-trends in the gate and substrate currents and the drain-current turnaround effect with oxide scaling.” Materials Research Society Symposium - Proceedings 567 (January 1, 1999): 227–39. https://doi.org/10.1557/proc-567-227.
Massoud HZ, Shiely JP, Shanware A. Self-consistent mosfet tunneling simulations-trends in the gate and substrate currents and the drain-current turnaround effect with oxide scaling. Materials Research Society Symposium - Proceedings. 1999 Jan 1;567:227–39.
Massoud, H. Z., et al. “Self-consistent mosfet tunneling simulations-trends in the gate and substrate currents and the drain-current turnaround effect with oxide scaling.” Materials Research Society Symposium - Proceedings, vol. 567, Jan. 1999, pp. 227–39. Scopus, doi:10.1557/proc-567-227.
Massoud HZ, Shiely JP, Shanware A. Self-consistent mosfet tunneling simulations-trends in the gate and substrate currents and the drain-current turnaround effect with oxide scaling. Materials Research Society Symposium - Proceedings. 1999 Jan 1;567:227–239.

Published In

Materials Research Society Symposium - Proceedings

DOI

ISSN

0272-9172

Publication Date

January 1, 1999

Volume

567

Start / End Page

227 / 239