Comparison of gettering in single- and multicrystalline silicon for solar cells
Publication
, Journal Article
Sopori, BL; Jastrzebski, L; Tan, T
Published in: Conference Record of the IEEE Photovoltaic Specialists Conference
December 1, 1996
The differences in the impurity gettering between single and multicrystalline silicon are discussed. These differences arise from impurity-defect interactions that occur during thermal processing of multicrystalline material. A gettering model is proposed to explain the observed behaviour of gettering in multicrystalline cells.
Duke Scholars
Published In
Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN
0160-8371
Publication Date
December 1, 1996
Start / End Page
625 / 628
Citation
APA
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ICMJE
MLA
NLM
Sopori, B. L., Jastrzebski, L., & Tan, T. (1996). Comparison of gettering in single- and multicrystalline silicon for solar cells. Conference Record of the IEEE Photovoltaic Specialists Conference, 625–628.
Sopori, B. L., L. Jastrzebski, and T. Tan. “Comparison of gettering in single- and multicrystalline silicon for solar cells.” Conference Record of the IEEE Photovoltaic Specialists Conference, December 1, 1996, 625–28.
Sopori BL, Jastrzebski L, Tan T. Comparison of gettering in single- and multicrystalline silicon for solar cells. Conference Record of the IEEE Photovoltaic Specialists Conference. 1996 Dec 1;625–8.
Sopori, B. L., et al. “Comparison of gettering in single- and multicrystalline silicon for solar cells.” Conference Record of the IEEE Photovoltaic Specialists Conference, Dec. 1996, pp. 625–28.
Sopori BL, Jastrzebski L, Tan T. Comparison of gettering in single- and multicrystalline silicon for solar cells. Conference Record of the IEEE Photovoltaic Specialists Conference. 1996 Dec 1;625–628.
Published In
Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN
0160-8371
Publication Date
December 1, 1996
Start / End Page
625 / 628