Wafer bonding of Si with dissimilar materials
Publication
, Journal Article
Tong, QY; Kidao, G; Tan, TY; Gosele, U
Published in: International Conference on Solid-State and Integrated Circuit Technology Proceedings
December 1, 1995
Wafer bonding provides a high degree of flexibility in material integration. However, the major concerns of Si wafer bonding with dissimilar materials are their thermal mismatch and the bubble generation during the annealing process. In this article, a low temperature bonding approach is described and implemented to realize bulk quality ultrathin SOI by an ion-implanted etch stop, single crystal ultrathin Si on quartz or on glass and Si/ZnS.
Duke Scholars
Published In
International Conference on Solid-State and Integrated Circuit Technology Proceedings
Publication Date
December 1, 1995
Start / End Page
524 / 526
Citation
APA
Chicago
ICMJE
MLA
NLM
Tong, Q. Y., Kidao, G., Tan, T. Y., & Gosele, U. (1995). Wafer bonding of Si with dissimilar materials. International Conference on Solid-State and Integrated Circuit Technology Proceedings, 524–526.
Tong, Q. Y., G. Kidao, T. Y. Tan, and U. Gosele. “Wafer bonding of Si with dissimilar materials.” International Conference on Solid-State and Integrated Circuit Technology Proceedings, December 1, 1995, 524–26.
Tong QY, Kidao G, Tan TY, Gosele U. Wafer bonding of Si with dissimilar materials. International Conference on Solid-State and Integrated Circuit Technology Proceedings. 1995 Dec 1;524–6.
Tong, Q. Y., et al. “Wafer bonding of Si with dissimilar materials.” International Conference on Solid-State and Integrated Circuit Technology Proceedings, Dec. 1995, pp. 524–26.
Tong QY, Kidao G, Tan TY, Gosele U. Wafer bonding of Si with dissimilar materials. International Conference on Solid-State and Integrated Circuit Technology Proceedings. 1995 Dec 1;524–526.
Published In
International Conference on Solid-State and Integrated Circuit Technology Proceedings
Publication Date
December 1, 1995
Start / End Page
524 / 526