Precipitate strain relief via point defect interaction: models for SiO2 in silicon
Publication
, Journal Article
Taylor, WJ; Gösele, UM; Tan, TY
Published in: Materials Chemistry and Physics
January 1, 1994
Duke Scholars
Published In
Materials Chemistry and Physics
DOI
ISSN
0254-0584
Publication Date
January 1, 1994
Volume
36
Issue
3-4
Start / End Page
389
Related Subject Headings
- Materials
- 4016 Materials engineering
- 1007 Nanotechnology
- 0912 Materials Engineering
- 0303 Macromolecular and Materials Chemistry
Citation
APA
Chicago
ICMJE
MLA
NLM
Taylor, W. J., Gösele, U. M., & Tan, T. Y. (1994). Precipitate strain relief via point defect interaction: models for SiO2 in silicon. Materials Chemistry and Physics, 36(3–4), 389. https://doi.org/10.1016/0254-0584(94)90060-4
Taylor, W. J., U. M. Gösele, and T. Y. Tan. “Precipitate strain relief via point defect interaction: models for SiO2 in silicon.” Materials Chemistry and Physics 36, no. 3–4 (January 1, 1994): 389. https://doi.org/10.1016/0254-0584(94)90060-4.
Taylor WJ, Gösele UM, Tan TY. Precipitate strain relief via point defect interaction: models for SiO2 in silicon. Materials Chemistry and Physics. 1994 Jan 1;36(3–4):389.
Taylor, W. J., et al. “Precipitate strain relief via point defect interaction: models for SiO2 in silicon.” Materials Chemistry and Physics, vol. 36, no. 3–4, Jan. 1994, p. 389. Scopus, doi:10.1016/0254-0584(94)90060-4.
Taylor WJ, Gösele UM, Tan TY. Precipitate strain relief via point defect interaction: models for SiO2 in silicon. Materials Chemistry and Physics. 1994 Jan 1;36(3–4):389.
Published In
Materials Chemistry and Physics
DOI
ISSN
0254-0584
Publication Date
January 1, 1994
Volume
36
Issue
3-4
Start / End Page
389
Related Subject Headings
- Materials
- 4016 Materials engineering
- 1007 Nanotechnology
- 0912 Materials Engineering
- 0303 Macromolecular and Materials Chemistry