Fair, R. B., & Richards, W. (1996). Process simulation of dopant atom diffusion in SiO2. In G. R. Srinivasan, C. S. Murthy, & S. T. Dunham (Eds.), PROCEEDINGS OF THE FOURTH INTERNATIONAL SYMPOSIUM ON PROCESS PHYSICS AND MODELING IN SEMICONDUCTOR TECHNOLOGY (Vol. 96, pp. 179–194). LOS ANGELES, CA: ELECTROCHEMICAL SOCIETY INC.

Fair, R. B., and W. Richards. “Process simulation of dopant atom diffusion in SiO2.” In PROCEEDINGS OF THE FOURTH INTERNATIONAL SYMPOSIUM ON PROCESS PHYSICS AND MODELING IN SEMICONDUCTOR TECHNOLOGY, edited by G. R. Srinivasan, C. S. Murthy, and S. T. Dunham, 96:179–94. ELECTROCHEMICAL SOCIETY INC, 1996.

Fair RB, Richards W. Process simulation of dopant atom diffusion in SiO2. In: Srinivasan GR, Murthy CS, Dunham ST, editors. PROCEEDINGS OF THE FOURTH INTERNATIONAL SYMPOSIUM ON PROCESS PHYSICS AND MODELING IN SEMICONDUCTOR TECHNOLOGY. ELECTROCHEMICAL SOCIETY INC; 1996. p. 179–94.

Fair, R. B., and W. Richards. “Process simulation of dopant atom diffusion in SiO2.” PROCEEDINGS OF THE FOURTH INTERNATIONAL SYMPOSIUM ON PROCESS PHYSICS AND MODELING IN SEMICONDUCTOR TECHNOLOGY, edited by G. R. Srinivasan et al., vol. 96, no. 4, ELECTROCHEMICAL SOCIETY INC, 1996, pp. 179–94.

Fair RB, Richards W. Process simulation of dopant atom diffusion in SiO2. In: Srinivasan GR, Murthy CS, Dunham ST, editors. PROCEEDINGS OF THE FOURTH INTERNATIONAL SYMPOSIUM ON PROCESS PHYSICS AND MODELING IN SEMICONDUCTOR TECHNOLOGY. ELECTROCHEMICAL SOCIETY INC; 1996. p. 179–194.