Massoud, H. Z. (1997). Ellipsometry-based process monitoring and control for ultrathin gate dielectrics. In M. J. Deen, W. D. Brown, K. B. Sundaram, & S. I. Raider (Eds.), PROCEEDINGS OF THE SYMPOSIUM ON SILICON NITRIDE AND SILICON DIOXIDE THIN INSULATING FILMS (Vol. 97, pp. 208–216). MONTREAL, CANADA: ELECTROCHEMICAL SOCIETY INC.

Massoud, H. Z. “Ellipsometry-based process monitoring and control for ultrathin gate dielectrics.” In PROCEEDINGS OF THE SYMPOSIUM ON SILICON NITRIDE AND SILICON DIOXIDE THIN INSULATING FILMS, edited by M. J. Deen, W. D. Brown, K. B. Sundaram, and S. I. Raider, 97:208–16. ELECTROCHEMICAL SOCIETY INC, 1997.

Massoud HZ. Ellipsometry-based process monitoring and control for ultrathin gate dielectrics. In: Deen MJ, Brown WD, Sundaram KB, Raider SI, editors. PROCEEDINGS OF THE SYMPOSIUM ON SILICON NITRIDE AND SILICON DIOXIDE THIN INSULATING FILMS. ELECTROCHEMICAL SOCIETY INC; 1997. p. 208–16.

Massoud, H. Z. “Ellipsometry-based process monitoring and control for ultrathin gate dielectrics.” PROCEEDINGS OF THE SYMPOSIUM ON SILICON NITRIDE AND SILICON DIOXIDE THIN INSULATING FILMS, edited by M. J. Deen et al., vol. 97, no. 10, ELECTROCHEMICAL SOCIETY INC, 1997, pp. 208–16.

Massoud HZ. Ellipsometry-based process monitoring and control for ultrathin gate dielectrics. In: Deen MJ, Brown WD, Sundaram KB, Raider SI, editors. PROCEEDINGS OF THE SYMPOSIUM ON SILICON NITRIDE AND SILICON DIOXIDE THIN INSULATING FILMS. ELECTROCHEMICAL SOCIETY INC; 1997. p. 208–216.