C-V MEASUREMENT AND SIMULATION OF SILICON-INSULATOR-SILICON (SIS) STRUCTURES FOR ANALYZING CHARGES IN BURIED OXIDES OF BONDED SOI MATERIALS
Publication
, Journal Article
MITANI, K; MASSOUD, HZ
Published in: IEICE TRANSACTIONS ON ELECTRONICS
December 1992
Duke Scholars
Published In
IEICE TRANSACTIONS ON ELECTRONICS
EISSN
1745-1353
ISSN
0916-8524
Publication Date
December 1992
Volume
E75C
Issue
12
Start / End Page
1421 / 1429
Related Subject Headings
- Electrical & Electronic Engineering
- 4009 Electronics, sensors and digital hardware
Citation
APA
Chicago
ICMJE
MLA
NLM
MITANI, K., & MASSOUD, H. Z. (1992). C-V MEASUREMENT AND SIMULATION OF SILICON-INSULATOR-SILICON (SIS) STRUCTURES FOR ANALYZING CHARGES IN BURIED OXIDES OF BONDED SOI MATERIALS. IEICE TRANSACTIONS ON ELECTRONICS, E75C(12), 1421–1429.
MITANI, K., and H. Z. MASSOUD. “C-V MEASUREMENT AND SIMULATION OF SILICON-INSULATOR-SILICON (SIS) STRUCTURES FOR ANALYZING CHARGES IN BURIED OXIDES OF BONDED SOI MATERIALS.” IEICE TRANSACTIONS ON ELECTRONICS E75C, no. 12 (December 1992): 1421–29.
MITANI K, MASSOUD HZ. C-V MEASUREMENT AND SIMULATION OF SILICON-INSULATOR-SILICON (SIS) STRUCTURES FOR ANALYZING CHARGES IN BURIED OXIDES OF BONDED SOI MATERIALS. IEICE TRANSACTIONS ON ELECTRONICS. 1992 Dec;E75C(12):1421–9.
MITANI, K., and H. Z. MASSOUD. “C-V MEASUREMENT AND SIMULATION OF SILICON-INSULATOR-SILICON (SIS) STRUCTURES FOR ANALYZING CHARGES IN BURIED OXIDES OF BONDED SOI MATERIALS.” IEICE TRANSACTIONS ON ELECTRONICS, vol. E75C, no. 12, Dec. 1992, pp. 1421–29.
MITANI K, MASSOUD HZ. C-V MEASUREMENT AND SIMULATION OF SILICON-INSULATOR-SILICON (SIS) STRUCTURES FOR ANALYZING CHARGES IN BURIED OXIDES OF BONDED SOI MATERIALS. IEICE TRANSACTIONS ON ELECTRONICS. 1992 Dec;E75C(12):1421–1429.
Published In
IEICE TRANSACTIONS ON ELECTRONICS
EISSN
1745-1353
ISSN
0916-8524
Publication Date
December 1992
Volume
E75C
Issue
12
Start / End Page
1421 / 1429
Related Subject Headings
- Electrical & Electronic Engineering
- 4009 Electronics, sensors and digital hardware