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Temperature dependence and postirradiation annealing response of the 1/f noise of 4H-SiC MOSFETs

Publication ,  Journal Article
Zhang, CX; Shen, X; Zhang, EX; Fleetwood, DM; Schrimpf, RD; Francis, SA; Roy, T; Dhar, S; Ryu, SH; Pantelides, ST
Published in: Ieee Transactions on Electron Devices
July 15, 2013

The temperature dependence of the low-frequency noise of 4H-silicon carbide (SiC) MOSFETs with nitrided oxides is reported over the temperature range 85-510 K. The 1f noise decreases significantly with increasing measurement temperature. This decrease in noise results primarily from a decrease in the density of interface traps at increasing temperatures. The 1f noise is also characterized after total ionizing dose irradiation and postirradiation annealing. No significant change in the 1f noise is observed after the devices are irradiated to 1 Mrad (SiO2) and then annealed under bias at elevated temperature. These results show that the 1f noise in 4H-SiC MOSFETs is dominated by the interaction of channel carriers with slow interface traps at temperatures <360 K and with border traps >360 K. This result contrasts with most experience with Si SiO2-based MOSFETs, and results from the wider bandgap and greater density of slow interface traps in SiC/SiO 2-based MOSFETs than in SiSiO2-based MOSFETs. © 1963-2012 IEEE.

Duke Scholars

Published In

Ieee Transactions on Electron Devices

DOI

ISSN

0018-9383

Publication Date

July 15, 2013

Volume

60

Issue

7

Start / End Page

2361 / 2367

Related Subject Headings

  • Applied Physics
  • 0906 Electrical and Electronic Engineering
 

Citation

APA
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ICMJE
MLA
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Zhang, C. X., Shen, X., Zhang, E. X., Fleetwood, D. M., Schrimpf, R. D., Francis, S. A., … Pantelides, S. T. (2013). Temperature dependence and postirradiation annealing response of the 1/f noise of 4H-SiC MOSFETs. Ieee Transactions on Electron Devices, 60(7), 2361–2367. https://doi.org/10.1109/TED.2013.2263426
Zhang, C. X., X. Shen, E. X. Zhang, D. M. Fleetwood, R. D. Schrimpf, S. A. Francis, T. Roy, S. Dhar, S. H. Ryu, and S. T. Pantelides. “Temperature dependence and postirradiation annealing response of the 1/f noise of 4H-SiC MOSFETs.” Ieee Transactions on Electron Devices 60, no. 7 (July 15, 2013): 2361–67. https://doi.org/10.1109/TED.2013.2263426.
Zhang CX, Shen X, Zhang EX, Fleetwood DM, Schrimpf RD, Francis SA, et al. Temperature dependence and postirradiation annealing response of the 1/f noise of 4H-SiC MOSFETs. Ieee Transactions on Electron Devices. 2013 Jul 15;60(7):2361–7.
Zhang, C. X., et al. “Temperature dependence and postirradiation annealing response of the 1/f noise of 4H-SiC MOSFETs.” Ieee Transactions on Electron Devices, vol. 60, no. 7, July 2013, pp. 2361–67. Scopus, doi:10.1109/TED.2013.2263426.
Zhang CX, Shen X, Zhang EX, Fleetwood DM, Schrimpf RD, Francis SA, Roy T, Dhar S, Ryu SH, Pantelides ST. Temperature dependence and postirradiation annealing response of the 1/f noise of 4H-SiC MOSFETs. Ieee Transactions on Electron Devices. 2013 Jul 15;60(7):2361–2367.

Published In

Ieee Transactions on Electron Devices

DOI

ISSN

0018-9383

Publication Date

July 15, 2013

Volume

60

Issue

7

Start / End Page

2361 / 2367

Related Subject Headings

  • Applied Physics
  • 0906 Electrical and Electronic Engineering