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Modeling the enhanced diffusion of implanted boron in silicon

Publication ,  Journal Article
Kim, Y; Tan, TY; Massoud, HZ; Fair, RB
Published in: Proceedings - The Electrochemical Society
January 1, 1991

A simulation model was developed to describe the anomalous transient enhanced diffusion of implanted boron in silicon characterized by profiles in which a secondary peak is formed near the amorphous/crystalline interface. In this model, the diffusion equation was obtained by assumining either a self-interstitial/boron atom exchange mechanism or an intrinsic point defect/boron atom pair formation and diffusion. The initial distribution of excess point defects was proposed based on a depth-dependent implantation damage distribution. The effective diffusivity of point defects and their initial distributions were adjusted during the simulation to obtained the best fit to the SIMS boron diffusion profiles.

Duke Scholars

Published In

Proceedings - The Electrochemical Society

ISSN

0161-6374

Publication Date

January 1, 1991

Volume

91

Issue

4

Start / End Page

304 / 320
 

Citation

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MLA
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Kim, Y., Tan, T. Y., Massoud, H. Z., & Fair, R. B. (1991). Modeling the enhanced diffusion of implanted boron in silicon. Proceedings - The Electrochemical Society, 91(4), 304–320.
Kim, Y., T. Y. Tan, H. Z. Massoud, and R. B. Fair. “Modeling the enhanced diffusion of implanted boron in silicon.” Proceedings - The Electrochemical Society 91, no. 4 (January 1, 1991): 304–20.
Kim Y, Tan TY, Massoud HZ, Fair RB. Modeling the enhanced diffusion of implanted boron in silicon. Proceedings - The Electrochemical Society. 1991 Jan 1;91(4):304–20.
Kim, Y., et al. “Modeling the enhanced diffusion of implanted boron in silicon.” Proceedings - The Electrochemical Society, vol. 91, no. 4, Jan. 1991, pp. 304–20.
Kim Y, Tan TY, Massoud HZ, Fair RB. Modeling the enhanced diffusion of implanted boron in silicon. Proceedings - The Electrochemical Society. 1991 Jan 1;91(4):304–320.

Published In

Proceedings - The Electrochemical Society

ISSN

0161-6374

Publication Date

January 1, 1991

Volume

91

Issue

4

Start / End Page

304 / 320