Modeling the enhanced diffusion of implanted boron in silicon
Publication
, Journal Article
Kim, Y; Tan, TY; Massoud, HZ; Fair, RB
Published in: Proceedings - The Electrochemical Society
January 1, 1991
A simulation model was developed to describe the anomalous transient enhanced diffusion of implanted boron in silicon characterized by profiles in which a secondary peak is formed near the amorphous/crystalline interface. In this model, the diffusion equation was obtained by assumining either a self-interstitial/boron atom exchange mechanism or an intrinsic point defect/boron atom pair formation and diffusion. The initial distribution of excess point defects was proposed based on a depth-dependent implantation damage distribution. The effective diffusivity of point defects and their initial distributions were adjusted during the simulation to obtained the best fit to the SIMS boron diffusion profiles.
Duke Scholars
Published In
Proceedings - The Electrochemical Society
ISSN
0161-6374
Publication Date
January 1, 1991
Volume
91
Issue
4
Start / End Page
304 / 320
Citation
APA
Chicago
ICMJE
MLA
NLM
Kim, Y., Tan, T. Y., Massoud, H. Z., & Fair, R. B. (1991). Modeling the enhanced diffusion of implanted boron in silicon. Proceedings - The Electrochemical Society, 91(4), 304–320.
Kim, Y., T. Y. Tan, H. Z. Massoud, and R. B. Fair. “Modeling the enhanced diffusion of implanted boron in silicon.” Proceedings - The Electrochemical Society 91, no. 4 (January 1, 1991): 304–20.
Kim Y, Tan TY, Massoud HZ, Fair RB. Modeling the enhanced diffusion of implanted boron in silicon. Proceedings - The Electrochemical Society. 1991 Jan 1;91(4):304–20.
Kim, Y., et al. “Modeling the enhanced diffusion of implanted boron in silicon.” Proceedings - The Electrochemical Society, vol. 91, no. 4, Jan. 1991, pp. 304–20.
Kim Y, Tan TY, Massoud HZ, Fair RB. Modeling the enhanced diffusion of implanted boron in silicon. Proceedings - The Electrochemical Society. 1991 Jan 1;91(4):304–320.
Published In
Proceedings - The Electrochemical Society
ISSN
0161-6374
Publication Date
January 1, 1991
Volume
91
Issue
4
Start / End Page
304 / 320