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The role of silicon self-interstitial supersaturation in the retardation of oxygen precipitation in Czochralski silicon

Publication ,  Journal Article
Rogers, WB; Massoud, HZ; Fair, RB; Gösele, UM; Tan, TY; Rozgonyi, GA
Published in: Journal of Applied Physics
December 1, 1989

The retardation phenomenon of oxygen precipitation in Czochralski silicon has been studied simultaneously with the growth of surface stacking faults under a silicon nitride capping layer. The surface faults were intentionally introduced to monitor the bulk self-interstitial supersaturation in the crystal during precipitate growth. It was observed that an increase in the low-temperature nucleation anneal time resulted in a reduced rate of oxygen precipitation and an enhanced rate of surface stacking fault growth at high temperatures. This indicates that as the nucleation anneal time increases, silicon self-interstitials, which must be generated for precipitation to proceed, reach a high level of supersaturation and cause the annihilation of most nuclei generated during the nucleation anneal.

Duke Scholars

Published In

Journal of Applied Physics

DOI

ISSN

0021-8979

Publication Date

December 1, 1989

Volume

65

Issue

11

Start / End Page

4215 / 4219

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 49 Mathematical sciences
  • 40 Engineering
  • 09 Engineering
  • 02 Physical Sciences
  • 01 Mathematical Sciences
 

Citation

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Rogers, W. B., Massoud, H. Z., Fair, R. B., Gösele, U. M., Tan, T. Y., & Rozgonyi, G. A. (1989). The role of silicon self-interstitial supersaturation in the retardation of oxygen precipitation in Czochralski silicon. Journal of Applied Physics, 65(11), 4215–4219. https://doi.org/10.1063/1.343303
Rogers, W. B., H. Z. Massoud, R. B. Fair, U. M. Gösele, T. Y. Tan, and G. A. Rozgonyi. “The role of silicon self-interstitial supersaturation in the retardation of oxygen precipitation in Czochralski silicon.” Journal of Applied Physics 65, no. 11 (December 1, 1989): 4215–19. https://doi.org/10.1063/1.343303.
Rogers WB, Massoud HZ, Fair RB, Gösele UM, Tan TY, Rozgonyi GA. The role of silicon self-interstitial supersaturation in the retardation of oxygen precipitation in Czochralski silicon. Journal of Applied Physics. 1989 Dec 1;65(11):4215–9.
Rogers, W. B., et al. “The role of silicon self-interstitial supersaturation in the retardation of oxygen precipitation in Czochralski silicon.” Journal of Applied Physics, vol. 65, no. 11, Dec. 1989, pp. 4215–19. Scopus, doi:10.1063/1.343303.
Rogers WB, Massoud HZ, Fair RB, Gösele UM, Tan TY, Rozgonyi GA. The role of silicon self-interstitial supersaturation in the retardation of oxygen precipitation in Czochralski silicon. Journal of Applied Physics. 1989 Dec 1;65(11):4215–4219.
Journal cover image

Published In

Journal of Applied Physics

DOI

ISSN

0021-8979

Publication Date

December 1, 1989

Volume

65

Issue

11

Start / End Page

4215 / 4219

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 49 Mathematical sciences
  • 40 Engineering
  • 09 Engineering
  • 02 Physical Sciences
  • 01 Mathematical Sciences