A new self-reference sensing scheme for TLC MRAM
Publication
, Conference
Li, Z; Yan, B; Yang, L; Zhao, W; Chen, Y; Li, H
Published in: Proceedings - IEEE International Symposium on Circuits and Systems
July 27, 2015
Density is one of the major design factors of magnetic random access memory (MRAM). Very recently, a tri-level cell (TLC) structure was proposed to enhance the storage density of MRAM. In this work, we propose a new self-reference sensing scheme for the TLC MRAM cell based on its unique property called state ordering. Simulation results show that compared to conventional design, our proposed self-reference scheme achieves on average 61% saving on sensing delay while also demonstrating significantly enhanced resilience to device parametric variations.
Duke Scholars
Published In
Proceedings - IEEE International Symposium on Circuits and Systems
DOI
ISSN
0271-4310
Publication Date
July 27, 2015
Volume
2015-July
Start / End Page
593 / 596
Citation
APA
Chicago
ICMJE
MLA
NLM
Li, Z., Yan, B., Yang, L., Zhao, W., Chen, Y., & Li, H. (2015). A new self-reference sensing scheme for TLC MRAM. In Proceedings - IEEE International Symposium on Circuits and Systems (Vol. 2015-July, pp. 593–596). https://doi.org/10.1109/ISCAS.2015.7168703
Li, Z., B. Yan, L. Yang, W. Zhao, Y. Chen, and H. Li. “A new self-reference sensing scheme for TLC MRAM.” In Proceedings - IEEE International Symposium on Circuits and Systems, 2015-July:593–96, 2015. https://doi.org/10.1109/ISCAS.2015.7168703.
Li Z, Yan B, Yang L, Zhao W, Chen Y, Li H. A new self-reference sensing scheme for TLC MRAM. In: Proceedings - IEEE International Symposium on Circuits and Systems. 2015. p. 593–6.
Li, Z., et al. “A new self-reference sensing scheme for TLC MRAM.” Proceedings - IEEE International Symposium on Circuits and Systems, vol. 2015-July, 2015, pp. 593–96. Scopus, doi:10.1109/ISCAS.2015.7168703.
Li Z, Yan B, Yang L, Zhao W, Chen Y, Li H. A new self-reference sensing scheme for TLC MRAM. Proceedings - IEEE International Symposium on Circuits and Systems. 2015. p. 593–596.
Published In
Proceedings - IEEE International Symposium on Circuits and Systems
DOI
ISSN
0271-4310
Publication Date
July 27, 2015
Volume
2015-July
Start / End Page
593 / 596