Scholars@Duke

Voltage driven nondestructive self-reference sensing scheme of spin-transfer torque memory

Publication ,  Journal Article
Sun, Z; Li, H; Chen, Y; Wang, X
Published in: IEEE Transactions on Very Large Scale Integration (VLSI) Systems
January 1, 2012
Published version (DOI)

Spin-transfer torque random access memory (STT-RAM) has demonstrated great potentials as a universal memory for its fast access speed, zero standby power, excellent scalability, and simplicity of cell structure. However, large process variations of both magnetic tunneling junction (MTJ) and CMOS process severely limit the yield of STT-RAM chips and prevent the massive production from happening. In this paper, we analyze and compare the impacts of process variations on various sensing schemes of STT-RAM design. On top of it, we propose a novel voltage-driven nondestructive self-reference sensing scheme to enhance the STT-RAM chip yield by significantly improving sense margin. Monte Carlo simulations of a 16-Kb STT-RAM array shows that our proposed scheme can achieve the same yield as the previous nondestructive self-reference sensing scheme while improving the sense margin by five times with the similar access performance and power. © 2011 IEEE.

Duke Scholars

Hai "Helen" Li
Author Hai "Helen" Li Electrical and Computer Engineering
Yiran Chen
Author Yiran Chen Electrical and Computer Engineering
Altmetric Attention Stats
Dimensions Citation Stats

Published In

IEEE Transactions on Very Large Scale Integration (VLSI) Systems

DOI

10.1109/TVLSI.2011.2166282

ISSN

1063-8210

Publication Date

January 1, 2012

Volume

20

Issue

11

Start / End Page

2020 / 2030

Related Subject Headings

  • Computer Hardware & Architecture
  • 4009 Electronics, sensors and digital hardware
  • 1006 Computer Hardware
  • 0906 Electrical and Electronic Engineering
  • 0805 Distributed Computing
 

Citation

APA
Chicago
ICMJE
MLA
NLM
Sun, Z., Li, H., Chen, Y., & Wang, X. (2012). Voltage driven nondestructive self-reference sensing scheme of spin-transfer torque memory. IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 20(11), 2020–2030. https://doi.org/10.1109/TVLSI.2011.2166282
Sun, Z., H. Li, Y. Chen, and X. Wang. “Voltage driven nondestructive self-reference sensing scheme of spin-transfer torque memory.” IEEE Transactions on Very Large Scale Integration (VLSI) Systems 20, no. 11 (January 1, 2012): 2020–30. https://doi.org/10.1109/TVLSI.2011.2166282.
Sun Z, Li H, Chen Y, Wang X. Voltage driven nondestructive self-reference sensing scheme of spin-transfer torque memory. IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 2012 Jan 1;20(11):2020–30.
Sun, Z., et al. “Voltage driven nondestructive self-reference sensing scheme of spin-transfer torque memory.” IEEE Transactions on Very Large Scale Integration (VLSI) Systems, vol. 20, no. 11, Jan. 2012, pp. 2020–30. Scopus, doi:10.1109/TVLSI.2011.2166282.
Sun Z, Li H, Chen Y, Wang X. Voltage driven nondestructive self-reference sensing scheme of spin-transfer torque memory. IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 2012 Jan 1;20(11):2020–2030.

Published In

IEEE Transactions on Very Large Scale Integration (VLSI) Systems

DOI

10.1109/TVLSI.2011.2166282

ISSN

1063-8210

Publication Date

January 1, 2012

Volume

20

Issue

11

Start / End Page

2020 / 2030

Related Subject Headings

  • Computer Hardware & Architecture
  • 4009 Electronics, sensors and digital hardware
  • 1006 Computer Hardware
  • 0906 Electrical and Electronic Engineering
  • 0805 Distributed Computing