RAM and TCAM designs by using STT-MRAM
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Yan, B; Li, Z; Chen, Y; Li, H
Published in: 2016 16th Non-Volatile Memory Technology Symposium, NVMTS 2016
December 9, 2016
Spin-transfer torque magnetic random access memory (STT-MRAM) is a prospective candidate for cache and main memory designs. However, the reliable revision of magnetization using current requires high current density, which is hardly affordable in aggressive scaling-down technology node. Nanoring shaped magnetic tunneling junction (NR-MTJ) remarkably reduces STT programming current density, as indicated by theoretical analysis. In this paper, we first introduce the fundamental of STT technology and describe the NR-MTJ's structure and characteristics. The design and implementation of a 4Kb STTMRAM with NR-MTJs, and a TCAM design for high speed and robustness are then demonstrated.
Duke Scholars
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2016 16th Non-Volatile Memory Technology Symposium, NVMTS 2016
DOI
Publication Date
December 9, 2016
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18 / 22
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Yan, B., Li, Z., Chen, Y., & Li, H. (2016). RAM and TCAM designs by using STT-MRAM. In 2016 16th Non-Volatile Memory Technology Symposium, NVMTS 2016 (pp. 18–22). https://doi.org/10.1109/NVMTS.2016.7781514
Yan, B., Z. Li, Y. Chen, and H. Li. “RAM and TCAM designs by using STT-MRAM.” In 2016 16th Non-Volatile Memory Technology Symposium, NVMTS 2016, 18–22, 2016. https://doi.org/10.1109/NVMTS.2016.7781514.
Yan B, Li Z, Chen Y, Li H. RAM and TCAM designs by using STT-MRAM. In: 2016 16th Non-Volatile Memory Technology Symposium, NVMTS 2016. 2016. p. 18–22.
Yan, B., et al. “RAM and TCAM designs by using STT-MRAM.” 2016 16th Non-Volatile Memory Technology Symposium, NVMTS 2016, 2016, pp. 18–22. Scopus, doi:10.1109/NVMTS.2016.7781514.
Yan B, Li Z, Chen Y, Li H. RAM and TCAM designs by using STT-MRAM. 2016 16th Non-Volatile Memory Technology Symposium, NVMTS 2016. 2016. p. 18–22.
Published In
2016 16th Non-Volatile Memory Technology Symposium, NVMTS 2016
DOI
Publication Date
December 9, 2016
Start / End Page
18 / 22