Access scheme of multi-level cell spin-transfer torque random access memory and its optimization
Publication
, Conference
Chen, Y; Wang, X; Zhu, W; Li, H; Sun, Z; Sun, G; Xie, Y
Published in: Midwest Symposium on Circuits and Systems
September 20, 2010
In this work, we study the access (read and write) scheme of the newly proposed Multi-Level Cell Spin-Transfer Torque Random Access Memory (MLC STT-RAM) from both the circuit design and architectural perspectives. Based on the physical principles of the resistance state transition of MLC STT-RAM, we proposed a read circuitry based on Dichotomic search algorithm and three write schemes with various design complexities - simple, complex, and hybrid schemes. The circuit and architectural level evaluations were conducted to analyze the power and performance tradeoffs in each proposed write mechanisms of MLC STT-RAM. © 2010 IEEE.
Duke Scholars
Published In
Midwest Symposium on Circuits and Systems
DOI
ISSN
1548-3746
Publication Date
September 20, 2010
Start / End Page
1109 / 1112
Citation
APA
Chicago
ICMJE
MLA
NLM
Chen, Y., Wang, X., Zhu, W., Li, H., Sun, Z., Sun, G., & Xie, Y. (2010). Access scheme of multi-level cell spin-transfer torque random access memory and its optimization. In Midwest Symposium on Circuits and Systems (pp. 1109–1112). https://doi.org/10.1109/MWSCAS.2010.5548848
Chen, Y., X. Wang, W. Zhu, H. Li, Z. Sun, G. Sun, and Y. Xie. “Access scheme of multi-level cell spin-transfer torque random access memory and its optimization.” In Midwest Symposium on Circuits and Systems, 1109–12, 2010. https://doi.org/10.1109/MWSCAS.2010.5548848.
Chen Y, Wang X, Zhu W, Li H, Sun Z, Sun G, et al. Access scheme of multi-level cell spin-transfer torque random access memory and its optimization. In: Midwest Symposium on Circuits and Systems. 2010. p. 1109–12.
Chen, Y., et al. “Access scheme of multi-level cell spin-transfer torque random access memory and its optimization.” Midwest Symposium on Circuits and Systems, 2010, pp. 1109–12. Scopus, doi:10.1109/MWSCAS.2010.5548848.
Chen Y, Wang X, Zhu W, Li H, Sun Z, Sun G, Xie Y. Access scheme of multi-level cell spin-transfer torque random access memory and its optimization. Midwest Symposium on Circuits and Systems. 2010. p. 1109–1112.
Published In
Midwest Symposium on Circuits and Systems
DOI
ISSN
1548-3746
Publication Date
September 20, 2010
Start / End Page
1109 / 1112