Robust 2-Qubit Gates in a Linear Ion Crystal Using a Frequency-Modulated Driving Force.
Publication
, Journal Article
Leung, PH; Landsman, KA; Figgatt, C; Linke, NM; Monroe, C; Brown, KR
Published in: Physical review letters
January 2018
In an ion trap quantum computer, collective motional modes are used to entangle two or more qubits in order to execute multiqubit logical gates. Any residual entanglement between the internal and motional states of the ions results in loss of fidelity, especially when there are many spectator ions in the crystal. We propose using a frequency-modulated driving force to minimize such errors. In simulation, we obtained an optimized frequency-modulated 2-qubit gate that can suppress errors to less than 0.01% and is robust against frequency drifts over ±1 kHz. Experimentally, we have obtained a 2-qubit gate fidelity of 98.3(4)%, a state-of-the-art result for 2-qubit gates with five ions.
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Published In
Physical review letters
DOI
EISSN
1079-7114
ISSN
0031-9007
Publication Date
January 2018
Volume
120
Issue
2
Start / End Page
020501
Related Subject Headings
- General Physics
- 51 Physical sciences
- 49 Mathematical sciences
- 40 Engineering
- 09 Engineering
- 02 Physical Sciences
- 01 Mathematical Sciences
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Leung, P. H., Landsman, K. A., Figgatt, C., Linke, N. M., Monroe, C., & Brown, K. R. (2018). Robust 2-Qubit Gates in a Linear Ion Crystal Using a Frequency-Modulated Driving Force. Physical Review Letters, 120(2), 020501. https://doi.org/10.1103/physrevlett.120.020501
Leung, Pak Hong, Kevin A. Landsman, Caroline Figgatt, Norbert M. Linke, Christopher Monroe, and Kenneth R. Brown. “Robust 2-Qubit Gates in a Linear Ion Crystal Using a Frequency-Modulated Driving Force.” Physical Review Letters 120, no. 2 (January 2018): 020501. https://doi.org/10.1103/physrevlett.120.020501.
Leung PH, Landsman KA, Figgatt C, Linke NM, Monroe C, Brown KR. Robust 2-Qubit Gates in a Linear Ion Crystal Using a Frequency-Modulated Driving Force. Physical review letters. 2018 Jan;120(2):020501.
Leung, Pak Hong, et al. “Robust 2-Qubit Gates in a Linear Ion Crystal Using a Frequency-Modulated Driving Force.” Physical Review Letters, vol. 120, no. 2, Jan. 2018, p. 020501. Epmc, doi:10.1103/physrevlett.120.020501.
Leung PH, Landsman KA, Figgatt C, Linke NM, Monroe C, Brown KR. Robust 2-Qubit Gates in a Linear Ion Crystal Using a Frequency-Modulated Driving Force. Physical review letters. 2018 Jan;120(2):020501.
Published In
Physical review letters
DOI
EISSN
1079-7114
ISSN
0031-9007
Publication Date
January 2018
Volume
120
Issue
2
Start / End Page
020501
Related Subject Headings
- General Physics
- 51 Physical sciences
- 49 Mathematical sciences
- 40 Engineering
- 09 Engineering
- 02 Physical Sciences
- 01 Mathematical Sciences