Erratum: Structural tolerance factor approach to defect-resistant I2 ‑II-IV‑X4 semiconductor design (Chemistry of Materials (2020) 32:4 (1636-1649) DOI: 10.1021/acs.chemmater.9b05107)
Publication
, Journal Article
Sun, JP; McKeown Wessler, GC; Wang, T; Zhu, T; Blum, V; Mitzi, DB
Published in: Chemistry of Materials
July 14, 2020
In our original manuscript, the energy band structure of Ag2PbSiS4 in the Ama2 structure, shown in Figure 11d and calculated at the level of the hybrid density functional HSE06, was mistakenly calculated without including the effects of spin- orbit coupling (SOC). The corresponding computed energy gap (Table 4) and optical properties (Figure 12) for this compound also did not include SOC. For all other compounds for which computational results are provided, SOC was included correctly. (Figure Presented).
Duke Scholars
Published In
Chemistry of Materials
DOI
EISSN
1520-5002
ISSN
0897-4756
Publication Date
July 14, 2020
Volume
32
Issue
13
Start / End Page
5925 / 5926
Related Subject Headings
- Materials
- 40 Engineering
- 34 Chemical sciences
- 09 Engineering
- 03 Chemical Sciences
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Sun, J. P., McKeown Wessler, G. C., Wang, T., Zhu, T., Blum, V., & Mitzi, D. B. (2020). Erratum: Structural tolerance factor approach to defect-resistant I2 ‑II-IV‑X4 semiconductor design (Chemistry of Materials (2020) 32:4 (1636-1649) DOI: 10.1021/acs.chemmater.9b05107). Chemistry of Materials, 32(13), 5925–5926. https://doi.org/10.1021/acs.chemmater.0c02346
Sun, J. P., G. C. McKeown Wessler, T. Wang, T. Zhu, V. Blum, and D. B. Mitzi. “Erratum: Structural tolerance factor approach to defect-resistant I2 ‑II-IV‑X4 semiconductor design (Chemistry of Materials (2020) 32:4 (1636-1649) DOI: 10.1021/acs.chemmater.9b05107).” Chemistry of Materials 32, no. 13 (July 14, 2020): 5925–26. https://doi.org/10.1021/acs.chemmater.0c02346.
Sun JP, McKeown Wessler GC, Wang T, Zhu T, Blum V, Mitzi DB. Erratum: Structural tolerance factor approach to defect-resistant I2 ‑II-IV‑X4 semiconductor design (Chemistry of Materials (2020) 32:4 (1636-1649) DOI: 10.1021/acs.chemmater.9b05107). Chemistry of Materials. 2020 Jul 14;32(13):5925–6.
Sun, J. P., et al. “Erratum: Structural tolerance factor approach to defect-resistant I2 ‑II-IV‑X4 semiconductor design (Chemistry of Materials (2020) 32:4 (1636-1649) DOI: 10.1021/acs.chemmater.9b05107).” Chemistry of Materials, vol. 32, no. 13, July 2020, pp. 5925–26. Scopus, doi:10.1021/acs.chemmater.0c02346.
Sun JP, McKeown Wessler GC, Wang T, Zhu T, Blum V, Mitzi DB. Erratum: Structural tolerance factor approach to defect-resistant I2 ‑II-IV‑X4 semiconductor design (Chemistry of Materials (2020) 32:4 (1636-1649) DOI: 10.1021/acs.chemmater.9b05107). Chemistry of Materials. 2020 Jul 14;32(13):5925–5926.
Published In
Chemistry of Materials
DOI
EISSN
1520-5002
ISSN
0897-4756
Publication Date
July 14, 2020
Volume
32
Issue
13
Start / End Page
5925 / 5926
Related Subject Headings
- Materials
- 40 Engineering
- 34 Chemical sciences
- 09 Engineering
- 03 Chemical Sciences