Skip to main content

The Effect of Annealing Ambient on Dopant Diffusion in Silicon during Low-Temperature Processing

Publication ,  Journal Article
Kim, Y; Massoud, HZ; Fair, RB
Published in: Journal of the Electrochemical Society
January 1, 1990

Annealing ambient effects on dopant diffusion in silicon were investigated during low-temperature processing. BF2, P, and As were implanted at room temperature in (100) silicon through a 140Å thick layer of SiO2 with the ion beam normal to the wafer surface, and the implant dose and energy sufficient to amorphize the surface layer. After low-temperature furnace annealing, ion-implanted B, P, and As in Si show a transient enhanced diffusion regime in both inert and oxidizing ambients. It was expected that point-defect generation during the annealing of implant damage would dominate the transient enhanced diffusion process regardless of the ambient. However, deeper P junctions were observed for implants annealed in an oxidizing ambient when the surface oxidation consumed more than 50Å of Si. We propose that stress in the surface layer plays an important role in the diffusion of high-dose P implants. The effect of oxidation is to consume this highly stressed surface layer which can suppress the P diffusion in the tail region. The role of the surface stress layer in P diffusion will be discussed and profile simulations using this model will be presented. © 1990, The Electrochemical Society, Inc. All rights reserved.

Duke Scholars

Published In

Journal of the Electrochemical Society

DOI

EISSN

1945-7111

ISSN

0013-4651

Publication Date

January 1, 1990

Volume

137

Issue

8

Start / End Page

2599 / 2603

Related Subject Headings

  • Energy
  • 4016 Materials engineering
  • 3406 Physical chemistry
  • 0912 Materials Engineering
  • 0306 Physical Chemistry (incl. Structural)
  • 0303 Macromolecular and Materials Chemistry
 

Citation

APA
Chicago
ICMJE
MLA
NLM
Kim, Y., Massoud, H. Z., & Fair, R. B. (1990). The Effect of Annealing Ambient on Dopant Diffusion in Silicon during Low-Temperature Processing. Journal of the Electrochemical Society, 137(8), 2599–2603. https://doi.org/10.1149/1.2086994
Kim, Y., H. Z. Massoud, and R. B. Fair. “The Effect of Annealing Ambient on Dopant Diffusion in Silicon during Low-Temperature Processing.” Journal of the Electrochemical Society 137, no. 8 (January 1, 1990): 2599–2603. https://doi.org/10.1149/1.2086994.
Kim Y, Massoud HZ, Fair RB. The Effect of Annealing Ambient on Dopant Diffusion in Silicon during Low-Temperature Processing. Journal of the Electrochemical Society. 1990 Jan 1;137(8):2599–603.
Kim, Y., et al. “The Effect of Annealing Ambient on Dopant Diffusion in Silicon during Low-Temperature Processing.” Journal of the Electrochemical Society, vol. 137, no. 8, Jan. 1990, pp. 2599–603. Scopus, doi:10.1149/1.2086994.
Kim Y, Massoud HZ, Fair RB. The Effect of Annealing Ambient on Dopant Diffusion in Silicon during Low-Temperature Processing. Journal of the Electrochemical Society. 1990 Jan 1;137(8):2599–2603.

Published In

Journal of the Electrochemical Society

DOI

EISSN

1945-7111

ISSN

0013-4651

Publication Date

January 1, 1990

Volume

137

Issue

8

Start / End Page

2599 / 2603

Related Subject Headings

  • Energy
  • 4016 Materials engineering
  • 3406 Physical chemistry
  • 0912 Materials Engineering
  • 0306 Physical Chemistry (incl. Structural)
  • 0303 Macromolecular and Materials Chemistry