Thermal model for the initiation of programming in metal-to-metal amorphous-silicon antifuses
Publication
, Journal Article
Vasudevan, N; Massoud, HZ; Fair, RB
Published in: Journal of the Electrochemical Society
April 1, 1999
A thermal model for the initiation of programming in metal-to-metal amorphous-silicon antifuses is described. The current and field crowding at the edges of the via cause the temperature at the via corners to increase due to Joule heating. Programming is initiated when the temperature at the via edges reaches the melting temperature of amorphous silicon. The model presented in this work explains how the thickness of the amorphous-silicon layer, the ambient temperature, and the duration of the programming pulse affect the programming process.
Duke Scholars
Published In
Journal of the Electrochemical Society
DOI
ISSN
0013-4651
Publication Date
April 1, 1999
Volume
146
Issue
4
Start / End Page
1536 / 1539
Related Subject Headings
- Energy
- 4016 Materials engineering
- 3406 Physical chemistry
- 0912 Materials Engineering
- 0306 Physical Chemistry (incl. Structural)
- 0303 Macromolecular and Materials Chemistry
Citation
APA
Chicago
ICMJE
MLA
NLM
Vasudevan, N., Massoud, H. Z., & Fair, R. B. (1999). Thermal model for the initiation of programming in metal-to-metal amorphous-silicon antifuses. Journal of the Electrochemical Society, 146(4), 1536–1539. https://doi.org/10.1149/1.1391800
Vasudevan, N., H. Z. Massoud, and R. B. Fair. “Thermal model for the initiation of programming in metal-to-metal amorphous-silicon antifuses.” Journal of the Electrochemical Society 146, no. 4 (April 1, 1999): 1536–39. https://doi.org/10.1149/1.1391800.
Vasudevan N, Massoud HZ, Fair RB. Thermal model for the initiation of programming in metal-to-metal amorphous-silicon antifuses. Journal of the Electrochemical Society. 1999 Apr 1;146(4):1536–9.
Vasudevan, N., et al. “Thermal model for the initiation of programming in metal-to-metal amorphous-silicon antifuses.” Journal of the Electrochemical Society, vol. 146, no. 4, Apr. 1999, pp. 1536–39. Scopus, doi:10.1149/1.1391800.
Vasudevan N, Massoud HZ, Fair RB. Thermal model for the initiation of programming in metal-to-metal amorphous-silicon antifuses. Journal of the Electrochemical Society. 1999 Apr 1;146(4):1536–1539.
Published In
Journal of the Electrochemical Society
DOI
ISSN
0013-4651
Publication Date
April 1, 1999
Volume
146
Issue
4
Start / End Page
1536 / 1539
Related Subject Headings
- Energy
- 4016 Materials engineering
- 3406 Physical chemistry
- 0912 Materials Engineering
- 0306 Physical Chemistry (incl. Structural)
- 0303 Macromolecular and Materials Chemistry