STRESS-ASSISTED DIFFUSION OF BORON AND ARSENIC IN SILICON.

The diffusion of B and As in mechanically stressed silicon has been investigated for initial implant doses of 10**1**3, 10**1**4, and 10**1**5 cm** minus **2, over a range of annealing temperatures. At stresses near the silicon yield point, no significant enhancement or retardation was observed. This was true even in plastically deformed samples with dislocation densities greater than 1 multiplied by 10**7 cm** minus **2. The results are consistent with the multiple charge state vacancy model of impurity diffusion in silicon. The B diffusivity appears to agree with the accepted activation energy of 3. 59 eV and pre-exponential of 3. 17 cm**2/sec for intrinsic B diffusion.

Duke Scholars

Author Richard B. Fair Electrical and Computer Engineering

Author Hisham Z. Massoud Electrical and Computer Engineering