Scholars@Duke publication: ON THE ROLE OF ION-IMPLANTATION DAMAGE IN SILICON ON DOPANT DIFFUSION FOR SHALLOW JUNCTION FORMATION

ON THE ROLE OF ION-IMPLANTATION DAMAGE IN SILICON ON DOPANT DIFFUSION FOR SHALLOW JUNCTION FORMATION

Publication , Journal Article

KIM, Y; FAIR, RB; MASSOUD, HZ

Published in: JOURNAL OF ELECTRONIC MATERIALS

July 1, 1988

JOURNAL OF ELECTRONIC MATERIALS

0361-5235

July 1, 1988

S26 / S26

MINERALS METALS MATERIALS SOC

APA

Chicago

ICMJE

MLA

NLM

KIM, Y., FAIR, R. B., & MASSOUD, H. Z. (1988). ON THE ROLE OF ION-IMPLANTATION DAMAGE IN SILICON ON DOPANT DIFFUSION FOR SHALLOW JUNCTION FORMATION. JOURNAL OF ELECTRONIC MATERIALS, 17(4), S26–S26.

KIM, Y., R. B. FAIR, and H. Z. MASSOUD. “ON THE ROLE OF ION-IMPLANTATION DAMAGE IN SILICON ON DOPANT DIFFUSION FOR SHALLOW JUNCTION FORMATION.” JOURNAL OF ELECTRONIC MATERIALS 17, no. 4 (July 1, 1988): S26–S26.

KIM, Y., et al. “ON THE ROLE OF ION-IMPLANTATION DAMAGE IN SILICON ON DOPANT DIFFUSION FOR SHALLOW JUNCTION FORMATION.” JOURNAL OF ELECTRONIC MATERIALS, vol. 17, no. 4, MINERALS METALS MATERIALS SOC, July 1988, pp. S26–S26.

KIM Y, FAIR RB, MASSOUD HZ. ON THE ROLE OF ION-IMPLANTATION DAMAGE IN SILICON ON DOPANT DIFFUSION FOR SHALLOW JUNCTION FORMATION. JOURNAL OF ELECTRONIC MATERIALS. MINERALS METALS MATERIALS SOC; 1988 Jul 1;17(4):S26–S26.

JOURNAL OF ELECTRONIC MATERIALS

0361-5235

July 1, 1988

S26 / S26

MINERALS METALS MATERIALS SOC