Scholars@Duke
Jesko Von Windheim

Jesko Von Windheim

Professor of the Practice in Environmental Entrepreneurship
Environmental Sciences and Policy
jesko.vonwindheim@duke.edu
Grainger Hall 3114, Box 90328, 9 Circuit Drive, Durham, NC 27708
9 Circuit Drive, Box 90328, Durham, NC 27708

Selected Publications

Assessing effects of pressure on tumor and normal tissue physiology using an automated self-calibrated, pressure-sensing probe for diffuse reflectance spectroscopy.

Journal Article J Biomed Opt · May 2018 Diffuse reflectance spectroscopy (DRS) represents a quantitative, noninvasive, nondestructive means of assessing vascular oxygenation, vascularity, and structural properties. However, it is known that such measurements can be influenced by the effects of p ... Full text Link to item Cite

Environmental management strategy: four forces analysis.

Journal Article Environmental management · January 2015 We develop an analytical approach for more systematically analyzing environmental management problems in order to develop strategic plans. This approach can be deployed by agencies, non-profit organizations, corporations, or other organizations and institu ... Full text Cite

A Quantitative Diffuse Reflectance Imaging (QDRI) System for Comprehensive Surveillance of the Morphological Landscape in Breast Tumor Margins.

Journal Article PLoS One · 2015 In an ongoing effort to address the clear clinical unmet needs surrounding breast conserving surgery (BCS), our group has developed a next-generation multiplexed optical-fiber-based tool to assess breast tumor margin status during initial surgeries. Specif ... Full text Link to item Cite

More push than pull

Journal Article Physics World · November 1, 2014 Full text Cite

Thermal management of electronic systems using diamond heat spreaders and microencapsulated PCM coolants

Conference National Heat Transfer Conference, 1997 · January 1, 1997 This program investigated the use of diamond heat spreaders and microencapsulated phase-change-material (microPCM) enhanced coolants to serve electronic systems with demanding size, weight and power requirements. Electrically-insulating and-conducting diam ... Full text Cite

Comparison of the electrical properties of simultaneously deposited homoepitaxial and polycrystalline diamond films

Journal Article Journal of Applied Physics · December 1, 1995 The electrical transport properties of simultaneously deposited, B-doped homoepitaxial and polycrystalline diamond thin films have been evaluated by Hall-effect and resistivity measurements over a temperature range of 80-600 K. The same films were later ch ... Full text Cite

Application of ion-assited electron beam metallization to diamond electronics

Journal Article Thin Solid Films · January 15, 1994 The application of the ion-assisted electron beam deposition technique for the fabrication of contacts on diamond has been evaluated by studying the adhesion of metal films as well as by performing electrical measurements on metal/diamond structures. Metal ... Full text Cite

Effect of native SiO2 layer on the nucleation of diamond using a combustion flame

Journal Article Diamond and Related Materials · January 1, 1994 The effect of native oxide thickness on the nucleation of diamond was investigated. The initial thickness of the native oxide on Si substrates was varied using three surface treatment methods: ultrasonic scratching, HF acid etching, and a combination of th ... Full text Cite

Comparison of electronic transport in boron-doped homoepitaxial, polycrystalline, and natural single-crystal diamond

Journal Article Applied Physics Letters · December 1, 1993 Hall-effect and resistivity measurements were performed on simultaneously deposited B-doped homoepitaxial and polycrystalline diamond films, as well as a (100)-oriented type-IIb natural diamond crystal, over a temperature range of 140-600 K. At 298 K, the ... Full text Cite

Effect of back contact impedance on frequency dependence of capacitance-voltage measurements on metal/diamond diodes

Journal Article Applied Physics Letters · December 1, 1993 Differential capacitance-voltage (C-V) measurements were performed on Al and Pt rectifying contacts fabricated on natural (type IIb) diamonds. The C-V data showed frequency dependence, which decreased significantly after reducing the back contact impedance ... Full text Cite

High-conductance, low-leakage diamond Schottky diodes

Journal Article Applied Physics Letters · December 1, 1993 Schottky diodes formed of Al, Au, and Hg on diamond have been characterized as a function of plasma treatment and thermal annealing. Plasmas formed from N2O, H2, or O2 result in high surface leakage, while plasmas formed from N2 or from CF4 with 8.5% O 2 r ... Full text Cite

Fabrication of diamond thin-film thermistors for high-temperature applications

Journal Article Diamond and Related Materials · April 13, 1993 CVD diamond thin-film thermistors have been fabricated in various geometries and at different doping levels in an effort to achieve practical resistance-vs.-temperature characteristics. Typical activation energy values reported for polycrystalline films we ... Full text Cite

Comparison of the electric properties of single-crystal and polycrystalline diamond by hall effect and capacitance-voltage measurements

Journal Article Diamond and Related Materials · April 13, 1993 The transport properties of type IIb (naturally B-doped), single-crystal diamond were investigated by differential capacitance-voltage (C-V) measurements, Hall effect measurements and resistivity measurements. The results for the Hall effect and resistivit ... Full text Cite

Fabrication of diamond thin-film thermistors for high-temperature applications

Journal Article Diamond and Related Materials · April 1, 1993 CVD diamond thin-film thermistors have been fabricated in various geometries and at different doping levels in an effort to achieve practical resistance-vs.-temperature characteristics. Typical activation energy values reported for polycrystalline films we ... Cite

Electrical characterization of semiconducting diamond thin films and single crystals

Journal Article Journal of Electronic Materials · April 1, 1993 Naturally occurring semiconducting single crystal (type IIb) diamonds and boron doped polycrystalline thin films were characterized by differential capacitance-voltage and Hall effect measurements, as well as secondary ion mass spectroscopy (SIMS). Results ... Full text Cite

Comparison of the electric properties of single-crystal and polycrystalline diamond by Hall effect and capacitance-voltage measurements

Journal Article Diamond and Related Materials · April 1, 1993 The transport properties of type IIb (naturally B-doped), single-crystal diamond were investigated by differential capacitance-voltage (C-V) measurements, Hall effect measurements and resistivity measurements. The results for the Hall effect and resistivit ... Cite

Nucleation and growth of diamond using a computer-controlled oxy-acetylene torch

Journal Article Diamond and Related Materials · March 31, 1993 A computer-controlled oxy-acetylene torch was used to nucleate and grow polycrystalline diamond films. The computer interface was designed to monitor and/or modify continuously oxygen and acetylene flow rates, while a PID temperature controller was used to ... Full text Cite

Combustion growth of large diamond crystals

Journal Article Journal of Crystal Growth · March 2, 1993 This paper reports the successful growth of optically transparent, individual diamond crystals up to millimeter diameters on silicon substrates by oxygen-acetylene combustion flames at atmospheric pressure. The growth process consisted of three steps: (i) ... Full text Cite

Nucleation and growth of diamond using a computer-controlled oxy-acetylene torch

Journal Article Diamond and Related Materials · March 1, 1993 A computer-controlled oxy-acetylene torch was used to nucleate and grow polycrystalline diamond films. The computer interface was designed to monitor and or modify continuously oxygen and acetylene flow rates, while a PID temperature controller was used to ... Cite

Deep-level effects on forward characteristics of rectifying contacts on semiconducting diamond

Journal Article IEEE Transactions on Electron Devices · 1993 Current-voltage characteristics of P-doped polycrystalline Si, Au, and Pt contacts on naturally occurring semiconducting (100) diamond crystals have been investigated. Logarithmic plots of the forward characteristics of these rectifying contacts indicate a ... Full text Cite

Improved uniformity and selected area deposition of diamond by the oxy-acetylene flame method

Journal Article Journal of Materials Research · January 1, 1992 The role of Si02in nucleation of diamond has been investigated in an oxy-acetylene flame. It was found that growth methods that minimize Si02formation enhance diamond nucleation. A short pretreatment of a scratched Si surface in a low oxygen-to-acetylene r ... Full text Cite

Hall effect measurements on CdTe electrodeposited from tri-n-butylphosphine telluride

Journal Article Journal of Physics and Chemistry of Solids · January 1, 1992 The carrier transport properties of CdTe electrodeposited from tri-n-butylphosphine telluride have been studied by resistivity and Hall effect measurements as a function of temperature. Argon annealed electrodeposited CdTe was found to be consistently p-ty ... Full text Cite

Removal and Preparation of Electrodeposited Semiconductors for High Impedance Hall Effect Measurements

Journal Article Journal of the Electrochemical Society · January 1, 1991 The preparation of electrodeposited semiconductors for Hall effect measurements is complicated by the fact that these materials are, by necessity, attached to highly conducting substrates. As a result, methods were developed to reproducibly remove large ar ... Full text Cite

Resistivity and Activation Energy of CdTe Electrodeposited at Various Cd(II) Concentrations

Journal Article Journal of the Electrochemical Society · January 1, 1991 Two methods have been investigated for incorporating excess cadmium into CdTe electrodeposited from tri-n-butyl-phosphine telluride. These were: (I) variation of the Cd(II):Te concentration ratio in situ from 0.009 to 0.30, and (ii) the diffusion of metall ... Full text Cite

Effect of dopants on the conductivity of electrodeposited CdTe

Journal Article Journal of Applied Physics · December 1, 1990 Thin-film polycrystalline CdTe was electrodeposited as described previously onto indium-tin-oxide coated glass under argon and then stored either under argon or air before and after the annealing step. Dopants were incorporated into films by several method ... Full text Cite

Variation of resistivity of copper-doped cadmium telluride prepared by electrodeposition

Journal Article Journal of Physics D: Applied Physics · May 14, 1990 Thin film p-cadmium telluride that has been electrodeposited from non-aqueous propylene carbonate has been doped with copper using two electrochemical methods. The first involved electrochemical codeposition (in situ doping) of copper and cadmium telluride ... Full text Cite

Photoelectrochemical Deposition of Cadmium Telluride Using Tri-N-Butylphosphine Telluride

Journal Article Journal of the Electrochemical Society · January 1, 1987 Thin film cadmium telluride has been deposited cathodically on titanium in a photoelectrochemical cell (PEC) using a propylene carbonate solution of Cd(II) and tri-n-butylphosphine telluride (BPT) at 100°C. Illumination of the cathode enhances the cathodic ... Full text Cite

PHOTOELECTROCHEMICAL DEPOSITION AND PROPERTIES OF THIN-FILM CADMIUM TELLURIDE.

Journal Article Canadian journal of physics · January 1, 1987 Full text Cite