Journal ArticlePhysical review. E · August 2022
Stochastic line integrals are presented as a useful metric for quantitatively characterizing irreversibility and detailed balance violation in noise-driven dynamical systems. A particular realization is the stochastic area, recently studied in coupled elec ...
Full textCite
Journal ArticleEuropean Physical Journal B · April 1, 2019
Abstract: Noise-induced switching between coexisting metastable states occurs in a wide range of far-from-equilibrium systems including micro-mechanical oscillators, epidemiological and climate change models, and nonlinear electronic transport in tunneling ...
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Journal ArticlePhysical review. E · February 2019
We report on the measurement of detailed balance violation in a coupled, noise-driven linear electronic circuit consisting of two nominally identical RC elements that are coupled via a variable capacitance. The state variables are the time-dependent voltag ...
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ConferenceSpringer Proceedings in Mathematics and Statistics · January 1, 2018
This paper presents a heuristic derivation of a geometric minimum action method that can be used to determine most-probable transition paths in noise-driven dynamical systems. Particular attention is focused on systems that violate detailed balance, and th ...
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Journal ArticlePhysical review. E · March 2017
Understanding the spatiotemporal structure of most probable fluctuation pathways to rarely occurring states is a central problem in the study of noise-driven, nonequilibrium dynamical systems. When the underlying system does not possess detailed balance, t ...
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Journal ArticlePhysical review letters · July 2014
We demonstrate the possibility to systematically steer the most probable escape paths (MPEPs) by adjusting relative noise intensities in dynamical systems that exhibit noise-induced escape from a metastable point via a saddle point. With the use of a geome ...
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Journal ArticlePhysical review letters · July 2012
We report on measurements of first-passage-time distributions associated with current switching in weakly coupled GaAs/AlAs superlattices driven by shot noise, a system that is both far from equilibrium and high dimensional. Static current-voltage (I-V) ch ...
Full textCite
Journal ArticlePhysical Review Letters · 2012
We report on measurements of first-passage-time distributions associated with current switching in
weakly coupled GaAs/AlAs superlattices driven by shot noise, a system that is both far from equilibrium
and high dimensional. Static current-voltage (I-V) ch ...
Cite
Journal ArticleNew Journal of Physics · November 1, 2010
We investigate a nonlinear circuit consisting of N tunnel diodes in series, which shows close similarities to a semiconductor superlattice or to a neural network. Each tunnel diode is modeled by a three-variable FitzHugh-Nagumo-like system. The tunnel diod ...
Full textCite
Journal ArticleNonlinear Wave Methods for Charge Transport · September 20, 2010
The present book introduces and develops mathematical techniques for the treatment of nonlinear waves and singular perturbation methods at a level that is suitable for graduate students, researchers and faculty throughout the natural sciences and engineeri ...
Full textCite
Journal ArticleJournal of Applied Physics · August 15, 2010
We study a series array of nonlinear electrical circuit elements that possess negative differential resistance and find that heterogeneity in the element properties leads to the presence of multiple branches in current-voltage curves and a nonuniform distr ...
Full textOpen AccessCite
Journal ArticleApplied Physics Letters · January 25, 2010
High field electronic transport through a strongly coupled superlattice (SL) with a shunting side layer is numerically studied using a drift-diffusion model that includes both vertical and lateral dynamics. The bias voltage corresponds to an average electr ...
Full textOpen AccessCite
Journal ArticleApplied Physics Letters · 2010
High field electronic transport through a strongly-coupled superlattice (SL) with a shunting
side layer is numerically studied using a novel drift-diffusion model. The bias voltage corresponds
to an average electric field in the negative differential condu ...
Cite
Journal ArticlePhysical Review B - Condensed Matter and Materials Physics · June 19, 2009
We study a model describing electronic transport in a weakly coupled semiconductor superlattice with a shunting side layer. Key parameters include the lateral size of the superlattice, the connectivity between the quantum wells of the superlattice and the ...
Full textCite
Journal ArticlePhysical Review B · 2009
We study a model describing electronic transport in a weakly coupled semiconductor superlattice with a
shunting side layer. Key parameters include the lateral size of the superlattice, the connectivity between the
quantum wells of the superlattice and the ...
Cite
Journal ArticlePhysical Review B - Condensed Matter and Materials Physics · December 3, 2007
Numerical simulation results are presented for a discrete drift-diffusion rate equation model that describes electronic transport due to sequential tunneling between adjacent quantum wells in weakly coupled semiconductor superlattices. We study the depende ...
Full textCite
Journal ArticlePhysical Review B · 2007
Numerical simulation results are presented for a discrete drift-diffusion rate equation model that describes electronic transport due to sequential tunneling between adjacent quantum wells in weakly coupled semiconductor superlattices. We study the depende ...
Cite
Journal ArticleJournal of Applied Physics · August 11, 2006
We discuss the mechanisms for negative differential conductance (NDC) and bistable behavior observed in the current-density-electric-field (j-F) characteristics of undoped GaAs/Al 0.45Ga 0.55As quantum-cascade structures (QCSs). While the j-F characteristi ...
Full textCite
Journal ArticleJournal of Applied Physics · July 2006
We discuss the mechanisms for negative differential conductance NDC and bistable behavior
observed in the current-density–electric-field j-F characteristics of undoped GaAs/Al0.45Ga0.55As
quantum-cascade structures QCSs . While the j-F characteristic ...
Cite
Journal ArticlePhysical review. E · August 2022
Stochastic line integrals are presented as a useful metric for quantitatively characterizing irreversibility and detailed balance violation in noise-driven dynamical systems. A particular realization is the stochastic area, recently studied in coupled elec ...
Full textCite
Journal ArticleEuropean Physical Journal B · April 1, 2019
Abstract: Noise-induced switching between coexisting metastable states occurs in a wide range of far-from-equilibrium systems including micro-mechanical oscillators, epidemiological and climate change models, and nonlinear electronic transport in tunneling ...
Full textCite
Journal ArticlePhysical review. E · February 2019
We report on the measurement of detailed balance violation in a coupled, noise-driven linear electronic circuit consisting of two nominally identical RC elements that are coupled via a variable capacitance. The state variables are the time-dependent voltag ...
Full textCite
ConferenceSpringer Proceedings in Mathematics and Statistics · January 1, 2018
This paper presents a heuristic derivation of a geometric minimum action method that can be used to determine most-probable transition paths in noise-driven dynamical systems. Particular attention is focused on systems that violate detailed balance, and th ...
Full textCite
Journal ArticlePhysical review. E · March 2017
Understanding the spatiotemporal structure of most probable fluctuation pathways to rarely occurring states is a central problem in the study of noise-driven, nonequilibrium dynamical systems. When the underlying system does not possess detailed balance, t ...
Full textCite
Journal ArticlePhysical review letters · July 2014
We demonstrate the possibility to systematically steer the most probable escape paths (MPEPs) by adjusting relative noise intensities in dynamical systems that exhibit noise-induced escape from a metastable point via a saddle point. With the use of a geome ...
Full textCite
Journal ArticlePhysical review letters · July 2012
We report on measurements of first-passage-time distributions associated with current switching in weakly coupled GaAs/AlAs superlattices driven by shot noise, a system that is both far from equilibrium and high dimensional. Static current-voltage (I-V) ch ...
Full textCite
Journal ArticlePhysical Review Letters · 2012
We report on measurements of first-passage-time distributions associated with current switching in
weakly coupled GaAs/AlAs superlattices driven by shot noise, a system that is both far from equilibrium
and high dimensional. Static current-voltage (I-V) ch ...
Cite
Journal ArticleNew Journal of Physics · November 1, 2010
We investigate a nonlinear circuit consisting of N tunnel diodes in series, which shows close similarities to a semiconductor superlattice or to a neural network. Each tunnel diode is modeled by a three-variable FitzHugh-Nagumo-like system. The tunnel diod ...
Full textCite
Journal ArticleNonlinear Wave Methods for Charge Transport · September 20, 2010
The present book introduces and develops mathematical techniques for the treatment of nonlinear waves and singular perturbation methods at a level that is suitable for graduate students, researchers and faculty throughout the natural sciences and engineeri ...
Full textCite
Journal ArticleJournal of Applied Physics · August 15, 2010
We study a series array of nonlinear electrical circuit elements that possess negative differential resistance and find that heterogeneity in the element properties leads to the presence of multiple branches in current-voltage curves and a nonuniform distr ...
Full textOpen AccessCite
Journal ArticleApplied Physics Letters · January 25, 2010
High field electronic transport through a strongly coupled superlattice (SL) with a shunting side layer is numerically studied using a drift-diffusion model that includes both vertical and lateral dynamics. The bias voltage corresponds to an average electr ...
Full textOpen AccessCite
Journal ArticleApplied Physics Letters · 2010
High field electronic transport through a strongly-coupled superlattice (SL) with a shunting
side layer is numerically studied using a novel drift-diffusion model. The bias voltage corresponds
to an average electric field in the negative differential condu ...
Cite
Journal ArticlePhysical Review B - Condensed Matter and Materials Physics · June 19, 2009
We study a model describing electronic transport in a weakly coupled semiconductor superlattice with a shunting side layer. Key parameters include the lateral size of the superlattice, the connectivity between the quantum wells of the superlattice and the ...
Full textCite
Journal ArticlePhysical Review B · 2009
We study a model describing electronic transport in a weakly coupled semiconductor superlattice with a
shunting side layer. Key parameters include the lateral size of the superlattice, the connectivity between the
quantum wells of the superlattice and the ...
Cite
Journal ArticlePhysical Review B - Condensed Matter and Materials Physics · December 3, 2007
Numerical simulation results are presented for a discrete drift-diffusion rate equation model that describes electronic transport due to sequential tunneling between adjacent quantum wells in weakly coupled semiconductor superlattices. We study the depende ...
Full textCite
Journal ArticlePhysical Review B · 2007
Numerical simulation results are presented for a discrete drift-diffusion rate equation model that describes electronic transport due to sequential tunneling between adjacent quantum wells in weakly coupled semiconductor superlattices. We study the depende ...
Cite
Journal ArticleJournal of Applied Physics · August 11, 2006
We discuss the mechanisms for negative differential conductance (NDC) and bistable behavior observed in the current-density-electric-field (j-F) characteristics of undoped GaAs/Al 0.45Ga 0.55As quantum-cascade structures (QCSs). While the j-F characteristi ...
Full textCite
Journal ArticleJournal of Applied Physics · July 2006
We discuss the mechanisms for negative differential conductance NDC and bistable behavior
observed in the current-density–electric-field j-F characteristics of undoped GaAs/Al0.45Ga0.55As
quantum-cascade structures QCSs . While the j-F characteristic ...
Cite
Journal ArticlePhysical Review B - Condensed Matter and Materials Physics · February 27, 2006
The current-voltage (I-V) characteristics of GaAs Alx Ga1-x As quantum cascade laser structures (QCLSs) are found to exhibit current plateaus with discontinuities for voltages below threshold. The number of current discontinuities is correlated with the nu ...
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Journal ArticlePhysical Review B · January 2006
The current-voltage (I-V ) characteristics of
GaAs/AlGaAs quantum-cascade laser structures
(QCLSs) are found to exhibit current plateaus
with discontinuities for voltages below
threshold.
The number of current discontinuities is
correlated with the number ...
Cite
Journal ArticlePhysica B: Condensed Matter · March 1, 2002
Static domain formation in doped, weakly coupled semiconductor superlattices results in several current branches separated by discontinuities that exhibit hysteresis. The transition from one branch to its adjacent higher and lower one is studied by time-re ...
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Journal ArticlePhysical Review B - Condensed Matter and Materials Physics · January 1, 2002
The formation of static electric-field domains in doped semiconductor superlattices appears in the current-voltage (formula presented) characteristics as multiple current branches separated by abrupt discontinuities. The switching dynamics of the charge-ac ...
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Journal ArticlePhysical review. E, Statistical, nonlinear, and soft matter physics · May 2001
A standard drift-diffusion model of space charge wave propagation in semiconductors has been studied numerically and analytically under dc voltage bias. For sufficiently long samples, appropriate contact resistivity, and applied voltage-such that the sampl ...
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Journal ArticlePhysical Review B - Condensed Matter and Materials Physics · January 1, 2001
Static domain formation in doped semiconductor superlattices results in several current branches separated by abrupt discontinuities that exhibit hysteresis. The transition from one branch to its adjacent one is studied by time-resolved switching experimen ...
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Journal ArticlePhysical Review E - Statistical, Nonlinear, and Soft Matter Physics · 2001
The chaos under dc voltage bias linked with multiple shedding of wave fronts were numerically simulated. Space charge wave dynamics was analyzed with a finite-dimensional model. Drift diffusion model of space charge wave propagation in semiconductors was s ...
Cite
Journal ArticleSuperlattices and Microstructures · January 1, 2000
GaAs/AlAs single quantum well structures designed with well thickness near the type-I/type-II crossover show distinctive photoluminescence peaks corresponding to both type-I and type-II recombinations. Photoluminescence measurements as a function of applie ...
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Journal ArticleApplied Physics Letters · June 21, 1999
Self-sustained photocurrent oscillations and bifurcation process have been demonstrated on an undoped photoexcited GaAs/AlAs superlattice. The effects of carrier density, varied by changing the laser intensity, on the transition between static and oscillat ...
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Journal ArticlePhysical Review B - Condensed Matter and Materials Physics · January 1, 1998
The effect of higher harmonics on the shape of Poincaré maps (first return maps) derived from current self-oscillations has been investigated in a semiconductor superlattice system driven by a dc + ac voltage bias. In addition to the intrinsic fundamental ...
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Journal ArticleJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures · May 1, 1997
The effect of barrier Al mole fraction, 0.2≤x≤0.8. on tunneling currents has been studied for a set of asymmetric GaAs/AlxGa1-xAs double barrier structures. The barrier widths of each sample were scaled so that barrier transmission coefficients for differe ...
Cite
Journal ArticleJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures · 1996
The scattering effects (specifically LO-phonon scattering) in a 45 Å AlAs/80 Å GaAs/33 A AlAs asymmetric double barrier resonant tunneling (ADBRT) structure with a short period GaAS/Al0.3Ga0.7As superlattice incorporated on one side of the double barrier h ...
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Journal ArticleJournal of Applied Physics · January 1, 1995
Phonon-assisted tunneling (PAT) has been studied in detail for two similar GaAs/AlAs double-barrier structures. Calculations of the PAT current - including effects of optical-phonon localization - are in good agreement with experimental data, and the emiss ...
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Journal ArticleJournal of Applied Physics · December 1, 1994
Conditions for Hopf bifurcations and associated current oscillations are presented for a standard model of a resonant tunneling diode circuit. We derive a simple analytic formula for the Hopf bifurcation type (subcritical or supercritical) and discuss how ...
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Journal ArticleSemiconductor Science and Technology · December 1, 1994
We present a model which describes the onset of current instabilities and space-charge domains in extrinsic semiconductors (especially p-Ge) under DC voltage bias. Just above the onset voltage for current instability we have found numerically small-amplitu ...
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Journal ArticleSemiconductor Science and Technology · December 1, 1994
We have measured current-voltage characteristics at liquid-helium temperature and for magnetic fields up to 7T(parallel to the current flow) for three similar asymmetric GaAs/AlAs double-barrier structures, all of which possess large phonon-assisted tunnel ...
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Journal ArticleSuperlattices and Microstructures · January 1, 1993
A generalization of the three-dimensional Fröhlich hamiltonian for a polar semiconductor is presented which describes the interaction between charge carriers of a zero-dimensional electron gas and longitudinal optical (LO) phonon modes confined in three sp ...
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Journal ArticleJournal of Applied Physics · December 1, 1992
In this paper, the commonly used but idealistic formulation of quantized optical-phonon modes for a heterostructure system with only two heterojunctions (i.e., single quantum-well structures) is extended to the more realistic case of multiheterointerface s ...
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Journal ArticleJournal of Applied Physics · December 1, 1992
The role of localized phonon modes in phonon-assisted tunneling in GaAs/AlAs double-barrier resonant tunneling structures is considered for a range of temperatures and magnetic fields. Phonon modes are calculated using a dielectric continuum model and elec ...
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Journal ArticlePhysica D: Nonlinear Phenomena · January 1, 1991
We present a theory of the existence and stability of traveling periodic and solitary space charge wave solutions to a standard rate equation model of electrical conduction in extrinsic semiconductors which includes effects of field-dependent impurity impa ...
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Journal ArticleApplied Physics A Solids and Surfaces · February 1, 1989
This paper reviews experimental and theoretical work carried out on space charge instabilities and temporal chaotic behavior in cooled extrinsic p-type Germanium photoconductors. Measured dc current-voltage (I-V) characteristics of these devices are strong ...
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Journal ArticleNuclear Physics B (Proceedings Supplements) · January 1, 1987
Experimental tests are presented of universal predictions of the circle map for the response of driven nonlinear oscillators, using a spatio-temporal instability associated with impurity impact ionization in liquid He cooled p-type Ge. Both the measured po ...
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Journal ArticlePhysica D: Nonlinear Phenomena · January 1, 1986
We present an experimental and theoretical analysis of the nonlinear response of cooled extrinsic Ge photoconductors of the type used to detect far-infrared radiation. State of the art p-type Ge devices with nearly ideal noise performance in the absence of ...
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Journal ArticlePhysica Scripta · January 1, 1986
Two sets of experimental results are given to demonstrate how modern nonlinear dynamics can be used to understand the dynamics of extrinsic Ge photoconductors. In the first, we show how complex and apparently random chaotic broadband noise is physically pr ...
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Journal ArticlePhysica D: Nonlinear Phenomena · January 1, 1986
We report an experimental measurement of nonlinear dc current-voltage (I-V) characteristics in p-type Ge extrinsic photoconductors at liquid He temperatures which exhibit a region of voltage-controlled negative differential resistance (NDR) above the thres ...
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Journal ArticlePhysica Scripta · January 1, 1986
We have studied the nonlinear dynamical properties of a simple periodicallydriven rate equation model describing electrical conduction in extrinsic photoconductors. Extensive numerical simulations analysed using phase portraits, Poincart sections, approxim ...
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Journal ArticleJournal of Applied Physics · December 1, 1985
Physical mechanisms responsible for nonlinear phenomena and anomalous transient response of cooled extrinsic far-infrared photoconductors are discussed. A simple model describing carrier generation, trapping, and impact ionization is presented, which descr ...
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Journal ArticlePhysical Review Letters · January 1, 1984
A simple model is studied describing low-temperature free-carrier dynamics in extrinsic photoconductors due to capture by impurity atoms and impact ionization. Numerical results are presented which exhibit period doubling, chaotic behavior, and elevated ef ...
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Journal ArticlePhysical Review Letters · January 1, 1983
Self-generated nonlinear oscillations and chaos are found in the conductance of liquid-He-cooled far-infrared photoconductors made from ultrapure Ge. Complex behavior includes a period-doubling cascade to chaotic oscillation with increasing applied electri ...
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