Aaron D. Franklin

Journal Article Small (Weinheim an der Bergstrasse, Germany) · March 2024 Three-dimensional (3D) graphene microstructures have the potential to boost performance in high-capacity batteries and ultrasensitive sensors. Numerous techniques have been developed to create such structures; however, the methods typically rely on structu ... Full text Cite

Band gap opening of metallic single-walled carbon nanotubes via noncovalent symmetry breaking.

Journal Article Proceedings of the National Academy of Sciences of the United States of America · March 2024 Covalent bonding interactions determine the energy-momentum (E-k) dispersion (band structure) of solid-state materials. Here, we show that noncovalent interactions can modulate the E-k dispersion near the Fermi level of a low-di ... Full text Cite

Addressing Signal Drift and Screening for Detection of Biomarkers with Carbon Nanotube Transistors.

Journal Article ACS nano · February 2024 Electrical biosensors, including transistor-based devices (i.e., BioFETs), have the potential to offer versatile biomarker detection in a simple, low-cost, scalable, and point-of-care manner. Semiconducting carbon nanotubes (CNTs) are among the most explor ... Full text Cite

Role of Electrode Configuration and Morphology in Printed Prothrombin Time Sensors.

Journal Article Sensors and actuators. B, Chemical · January 2024 Patients on long-term anticoagulation therapy require frequent testing of prothrombin time/international normalized ratio (PT/INR) to ensure therapeutic efficacy. Point-of-care (POC) PT tests for at-home monitoring eliminate the burden of visiting the clin ... Full text Cite

Aerosol jet printing of surface acoustic wave microfluidic devices.

Journal Article Microsystems & nanoengineering · January 2024 The addition of surface acoustic wave (SAW) technologies to microfluidics has greatly advanced lab-on-a-chip applications due to their unique and powerful attributes, including high-precision manipulation, versatility, integrability, biocompatibility, cont ... Full text Cite

Conformal printed electronics on flexible substrates and inflatable catheters using lathe-based aerosol jet printing.

Journal Article Npj flexible electronics · January 2024 With the growth of additive manufacturing (AM), there has been increasing demand for fabricating conformal electronics that directly integrate with larger components to enable unique functionality. However, fabrication of conformal electronics is challengi ... Full text Cite

Distinct Contact Scaling Effects in MoS₂ Transistors Revealed with Asymmetrical Contact Measurements.

Journal Article Advanced materials (Deerfield Beach, Fla.) · May 2023 2D semiconducting materials have immense potential for future electronics due to their atomically thin nature, which enables better scalability. While the channel scalability of 2D materials has been extensively studied, the current understanding of contac ... Full text Cite

All-Carbon Thin-Film Transistors Using Water-Only Printing.

Journal Article Nano letters · March 2023 Printing thin-film transistors (TFTs) using nanomaterials is a promising approach for future electronics. Yet, most inks rely on environmentally harmful solvents for solubilizing and postprint processing the nanomaterials. In this work, we demonstrate wate ... Full text Cite

Aerosol Jet Printed Surface-Enhanced Raman Substrates: Application for High-Sensitivity Detection of Perfluoroalkyl Substances.

Journal Article ACS omega · January 2023 Printing technologies offer an attractive means for producing low-cost surface-enhanced Raman spectroscopy (SERS) substrates with high-throughput methods. The development of these substrates is especially important for field-deployable detection of environ ... Full text Cite

Nanomaterials in transistors

Chapter · January 1, 2023 High-performance silicon transistors support computational function for digital technologies that profoundly impact modern lives. The scaling of silicon transistors, following Moore’s law for almost 6 decades, has slowed and will eventually run out of stea ... Full text Cite

Ionic dielectrics for fully printed carbon nanotube transistors: impact of composition and induced stresses.

Journal Article Nanoscale · November 2022 Printed carbon nanotube thin-film transistors (CNT-TFTs) are candidates for flexible electronics with printability on a wide range of substrates. Among the layers comprising a CNT-TFT, the gate dielectric has proven most difficult to additively print owing ... Full text Cite

Carbon nanotube transistors: Making electronics from molecules.

Journal Article Science (New York, N.Y.) · November 2022 Semiconducting carbon nanotubes are robust molecules with nanometer-scale diameters that can be used in field-effect transistors, from larger thin-film implementation to devices that work in conjunction with silicon electronics, and can potentially be used ... Full text Cite

Passivation Strategies for Enhancing Solution-Gated Carbon Nanotube Field-Effect Transistor Biosensing Performance and Stability in Ionic Solutions.

Journal Article ACS applied nano materials · October 2022 Interest in point-of-care diagnostics has led to increasing demand for the development of nanomaterial-based electronic biosensors such as biosensor field-effect transistors (BioFETs) due to their inherent simplicity, sensitivity, and scalability. The util ... Full text Cite

Author Correction: How to report and benchmark emerging field-effect transistors (Nature Electronics, (2022), 5, 7, (416-423), 10.1038/s41928-022-00798-8)

Journal Article Nature Electronics · September 1, 2022 In the version of this article initially published, the first entry in Table 2 referred to the carrier density of Imax, which has since been deleted. The Fig. 3a caption, third sentence, contained “not at the same ns,” which has been removed, and the Fig. ... Full text Cite

How to report and benchmark emerging field-effect transistors

Journal Article Nature Electronics · July 1, 2022 The use of organic, oxide and low-dimensional materials in field-effect transistors has now been studied for decades. However, properly reporting and comparing device performance remains challenging due to the interdependency of multiple device parameters. ... Full text Cite

Aerosol Jet Printing of SU-8 as a Passivation Layer Against Ionic Solutions.

Journal Article Journal of electronic materials · April 2022 To ensure stability for low-cost electronics used in direct contact with ionic solutions (such as electronic biosensors), electrodes are frequently passivated to protect against current leakage, which leads to corrosion. The epoxy-based polymer SU-8 yields ... Full text Cite

Are 2D Interfaces Really Flat?

Journal Article ACS nano · April 2022 Two-dimensional (2D) van der Waals materials are subject to mechanical deformation and thus forming bubbles and wrinkles during exfoliation and transfer. A lack of interfacial "flatness" has implications for interface properties, such as those formed by me ... Full text Cite

Transistors based on two-dimensional materials for future integrated circuits

Journal Article Nature Electronics · November 1, 2021 Field-effect transistors based on two-dimensional (2D) materials have the potential to be used in very large-scale integration (VLSI) technology, but whether they can be used at the front end of line or at the back end of line through monolithic or heterog ... Full text Cite

Unanticipated polarity shift in edge-contacted tungsten-based 2D transition metal dichalcogenide transistors

Journal Article IEEE Electron Device Letters · October 1, 2021 Creating metal edge contacts in transition metal dichalcogenide (TMD) transistors is a promising path to advance transistor miniaturization for future technology nodes. Current experimental demonstrations nearly exclusively focus on MoS2 as the channel mat ... Full text Cite

Electrically Tunable Surface Acoustic Wave Propagation at MHz Frequencies Based on Carbon Nanotube Thin-Film Transistors

Journal Article Advanced Functional Materials · May 1, 2021 Surface acoustic waves (SAWs) that propagate on the surface of a solid at MHz frequencies are widely used in sensing, communication, and acoustic tweezers. However, their properties are difficult to be tuned electrically, and current devices suffer from co ... Full text Cite

Aerosol Jet Printing Conductive 3D Microstructures from Graphene Without Post-Processing.

Band gap opening of metallic single-walled carbon nanotubes via noncovalent symmetry breaking.

Addressing Signal Drift and Screening for Detection of Biomarkers with Carbon Nanotube Transistors.

Role of Electrode Configuration and Morphology in Printed Prothrombin Time Sensors.

Aerosol jet printing of surface acoustic wave microfluidic devices.

Conformal printed electronics on flexible substrates and inflatable catheters using lathe-based aerosol jet printing.

Distinct Contact Scaling Effects in MoS₂ Transistors Revealed with Asymmetrical Contact Measurements.

All-Carbon Thin-Film Transistors Using Water-Only Printing.

Aerosol Jet Printed Surface-Enhanced Raman Substrates: Application for High-Sensitivity Detection of Perfluoroalkyl Substances.

Nanomaterials in transistors

Ionic dielectrics for fully printed carbon nanotube transistors: impact of composition and induced stresses.

Carbon nanotube transistors: Making electronics from molecules.

Passivation Strategies for Enhancing Solution-Gated Carbon Nanotube Field-Effect Transistor Biosensing Performance and Stability in Ionic Solutions.

Author Correction: How to report and benchmark emerging field-effect transistors (Nature Electronics, (2022), 5, 7, (416-423), 10.1038/s41928-022-00798-8)

How to report and benchmark emerging field-effect transistors

Aerosol Jet Printing of SU-8 as a Passivation Layer Against Ionic Solutions.

Are 2D Interfaces Really Flat?

Transistors based on two-dimensional materials for future integrated circuits

Unanticipated polarity shift in edge-contacted tungsten-based 2D transition metal dichalcogenide transistors

Electrically Tunable Surface Acoustic Wave Propagation at MHz Frequencies Based on Carbon Nanotube Thin-Film Transistors

Printable and recyclable carbon electronics using crystalline nanocellulose dielectrics.

Journal Article Nature electronics · April 2021 Electronic waste can lead to the accumulation of environmentally and biologically toxic materials and is a growing global concern. Developments in transient electronics-in which devices are designed to disintegrate after use-have focused on increasing the ... Full text Cite

Short-channel robustness from negative capacitance in 2D NC-FETs

Journal Article Applied Physics Letters · March 8, 2021 To date, the robustness of performance, including tolerance to channel-length scaling effects, in scaled transistors has become increasingly important. Negative capacitance (NC) field-effect transistors (FETs) have drawn considerable attention and many stu ... Full text Cite

In-Place Printing of Flexible Electrolyte-Gated Carbon Nanotube Transistors with Enhanced Stability.

Journal Article IEEE electron device letters : a publication of the IEEE Electron Devices Society · March 2021 Ion gel-based dielectrics have long been considered for enabling low-voltage operation in printed thin-film transistors (TFTs), but their compatibility with in-place printing (a streamlined, direct-write printing approach where devices never leave the prin ... Full text Cite

How good are 2D transistors? An application-specific benchmarking study

Journal Article Applied Physics Letters · January 18, 2021 The research community has invested heavily in semiconducting two-dimensional (2D) materials, such as transition metal dichalcogenides (TMDs). Their stability when scaled down to a few atoms thick makes them attractive candidates to replace or supplement s ... Full text Cite

Fully printed prothrombin time sensor for point-of-care testing.

Journal Article Biosens Bioelectron · January 15, 2021 With an increasing number of patients relying on blood thinners to treat medical conditions, there is a rising need for rapid, low-cost, portable testing of blood coagulation time or prothrombin time (PT). Current methods for measuring PT require regular v ... Full text Link to item Cite

Evaluating the effect of longitudinal dose and INR data on maintenance warfarin dose predictions

Conference BHI 2021 - 2021 IEEE EMBS International Conference on Biomedical and Health Informatics, Proceedings · January 1, 2021 Warfarin, a commonly prescribed drug to prevent blood clots, has a highly variable individual response. Determining a maintenance warfarin dose that achieves a therapeutic blood clotting time, as measured by the international normalized ratio (INR), is cru ... Full text Cite

Flash ablation metallization of conductive thermoplastics

Journal Article Additive Manufacturing · December 1, 2020 Featured Publication Fused filament fabrication (FFF) is the most widely available 3D printing technology. Recently, a variety of conductive thermoplastic filaments have become commercially available, allowing printing of electronic structures using the technology. However, th ... Full text Cite

Printed carbon nanotube thin-film transistors: progress on printable materials and the path to applications.

Journal Article Nanoscale · December 2020 Printing technologies have attracted significant attention owing to their potential use in the low-cost manufacturing of custom or large-area flexible electronics. Among the many printable electronic materials that have been explored, semiconducting carbon ... Full text Cite

Understanding and Mapping Sensitivity in MoS₂ Field-Effect-Transistor-Based Sensors.

Journal Article ACS nano · September 2020 Sensors based on two-dimensional (2D) field-effect transistors (FETs) are extremely sensitive and can detect charged analytes with attomolar limits of detection (LOD). Despite some impressive LODs, the operating mechanisms and factors that determine the si ... Full text Cite

Uniform and Stable Aerosol Jet Printing of Carbon Nanotube Thin-Film Transistors by Ink Temperature Control.

Journal Article ACS applied materials & interfaces · September 2020 Featured Publication Semiconducting carbon nanotube (CNT) networks exhibit electrical, mechanical, and chemical properties attractive for thin-film applications, and printing allows for scalable and economically favorable fabrication of CNT thin-film transistors (TFTs). Howeve ... Full text Cite

Capping Layers to Improve the Electrical Stress Stability of MoS₂ Transistors.

Journal Article ACS applied materials & interfaces · August 2020 Two-dimensional (2D) materials offer exciting possibilities for numerous applications, including next-generation sensors and field-effect transistors (FETs). With their atomically thin form factor, it is evident that molecular activity at the interfaces of ... Full text Cite

BYOE: Microelectronic non-idealities laboratory explorations

Conference ASEE Annual Conference and Exposition, Conference Proceedings · June 22, 2020 Microelectronic circuits and semiconductor devices are presented to students and treated in circuits as ideal. This makes sense initially. Unfortunately, it is often not possible to delve fully into the many non-ideal behaviors these devices can exhibit in ... Cite

Aerosol jet printing of biological inks by ultrasonic delivery.

Journal Article Biofabrication · February 2020 Featured Publication Printing is a promising method to reduce the cost of fabricating biomedical devices. While there have been significant advancements in direct-write printing techniques, non-contact printing of biological reagents has been almost exclusively limited to inkj ... Full text Cite

Carbon nanotube electronics for IoT sensors

Journal Article Nano Futures · January 1, 2020 The Internet of Things (IoT) is the concept of a ubiquitous computing ecosystem in which electronics of custom form factors are seamlessly embedded into everyday objects. At the heart of the IoT are electronic sensors capable of detecting physical/environm ... Full text Cite

Printed electronic sensor array for mapping tire tread thickness profiles

Journal Article IEEE Sensors Journal · October 1, 2019 Tire tread wear is a significant vehicular safety concern; yet, monitoring tread depth (or thickness) still relies on manual detection, which is rarely done by consumers and is time-consuming for service lane technicians. In this paper, we present a fully ... Full text Cite

Flexible, Print-in-Place 1D-2D Thin-Film Transistors Using Aerosol Jet Printing.

Journal Article ACS nano · October 2019 Semiconducting carbon nanotubes (CNTs) printed into thin films offer high electrical performance, significant mechanical stability, and compatibility with low-temperature processing. Yet, the implementation of low-temperature printed devices, such as CNT t ... Full text Cite

Immunity to Contact Scaling in MoS₂ Transistors Using in Situ Edge Contacts.

Journal Article Nano letters · August 2019 Atomically thin two-dimensional (2D) materials are promising candidates for sub-10 nm transistor channels due to their ultrathin body thickness, which results in strong electrostatic gate control. Properly scaling a transistor technology requires reducing ... Full text Cite

Silver nanowire inks for direct-write electronic tattoo applications.

Journal Article Nanoscale · August 2019 Room-temperature printing of conductive traces has the potential to facilitate the direct writing of electronic tattoos and other medical devices onto biological tissue, such as human skin. However, in order to achieve sufficient electrical performance, th ... Full text Cite

Plasma-Enhanced Atomic Layer Deposition of HfO2 on Monolayer, Bilayer, and Trilayer MoS2 for the Integration of High-κ Dielectrics in Two-Dimensional Devices

Journal Article ACS Applied Nano Materials · July 26, 2019 As two-dimensional (2D) electronic devices continue to advance, the need for integrating high-quality, high-κ nanoscale dielectrics becomes more essential. Plasma-enhanced atomic layer deposition (PEALD) is a promising approach for depositing ultrathin die ... Full text Cite

Convergent ion beam alteration of 2D materials and metal-2D interfaces

Journal Article 2D Materials · June 6, 2019 Tailoring the properties of two-dimensional (2D) crystals is important for both understanding the material behavior and exploring new functionality. Here we demonstrate the alteration of MoS2 and metal-MoS2 interfaces using a convergent ion beam. Different ... Full text Cite

New Observations in Contact Scaling for 2D FETs

Conference Device Research Conference - Conference Digest, DRC · June 1, 2019 Atomically thin 2D crystals are promising channel materials for extremely scaled field-effect transistors (FETs). For devices at the scaled regime, both channel and contact length must be scaled. However, contacting 2D materials at scaled contact lengths ( ... Full text Cite

Full In-Place Printing of Flexible Electrolyte-Gated CNT-TFTs

Conference Device Research Conference - Conference Digest, DRC · June 1, 2019 The vast majority of research in the printed electronics space is invested into the development of RFID antennae, sensors, and transistors to facilitate the growth of ubiquitous electronics for the Internet-of-Things (IoT) [1]. Despite an intensive researc ... Full text Cite

Printing h-BN Gate Dielectric for Flexible, Low-hysteresis Carbon Nanotube Thin-Film Transistors at Low Temperature

Conference Device Research Conference - Conference Digest, DRC · June 1, 2019 Increasing interest in printing for flexible electronics is driven by the rapid growth and maturation of the Internet of Things (IoT) and motivates the study of printable materials and printing methods [1]. While semiconducting carbon nanotubes (CNTs) have ... Full text Cite

Electronic Stability of Carbon Nanotube Transistors Under Long-Term Bias Stress.

Journal Article Nano letters · March 2019 Thousands of reports have demonstrated the exceptional performance of sensors based on carbon nanotube (CNT) transistors, with promises of transformative impact. Yet, the effect of long-term bias stress on individual CNTs, critical for most sensing applica ... Full text Cite

Impact of Morphology on Printed Contact Performance in Carbon Nanotube Thin-Film Transistors

Journal Article Advanced Functional Materials · January 4, 2019 Silver nanoparticles (NPs) are the most widely used conductive material throughout the printed electronics space due to their high conductivity and low cost. However, when interfacing with other prominent printed materials, such as semiconducting carbon na ... Full text Cite

Effects of Gate Stack Composition and Thickness in 2-D Negative Capacitance FETs

Journal Article IEEE Journal of the Electron Devices Society · January 1, 2019 Negative capacitance (NC) field-effect transistors (FETs) with 2-D semiconducting channels have become increasingly attractive due to their ability to produce sub-60 mV/dec switching behavior in a physically scalable device. However, it has yet to be deter ... Full text Cite

Fully Printed and Flexible Carbon Nanotube Transistors for Pressure Sensing in Automobile Tires

Journal Article IEEE Sensors Journal · October 1, 2018 As the need for an increased supply and diversity of sensors expands, printed electronics have been identified as a promising approach for low-cost, ubiquitous sensor networks. In this paper, we demonstrate the use of a fully printed carbon nanotube thin-f ... Full text Cite

Contacting and Gating 2-D Nanomaterials

Journal Article IEEE Transactions on Electron Devices · October 1, 2018 Two-dimensional (2-D) nanomaterials provide opportunities for a wide range of applications. In order to harness their usefulness, understanding and controlling the interface between 2-D crystals and other materials is of paramount importance. For electroni ... Full text Cite

Exploring silver contact morphologies in printed carbon nanotube thin-film transistors

Conference Device Research Conference - Conference Digest, DRC · August 20, 2018 Demand for ubiquitous and flexible electronics to facilitate the rapid growth of Internet- of- Things (IoT) technologies has driven the advancement of printed electronics for low-cost and high-throughput manufacturing. The carbon nanotube thin-film transis ... Full text Cite

Bias stress stability of carbon nanotube transistors with implications for sensors

Conference Device Research Conference - Conference Digest, DRC · August 20, 2018 For years, carbon nanotube (CNT) field- effect transistors (CNTFETs) have been promoted for their superb performance in sensing applications [1]. As hollow cylinders of sp2-bonded carbon, CNTs have their entire crystal structure exposed and thus are highly ... Full text Cite

Patterned Liquid Metal Contacts for Printed Carbon Nanotube Transistors.

Journal Article ACS nano · June 2018 Flexible and stretchable electronics are poised to enable many applications that cannot be realized with traditional, rigid devices. One of the most promising options for low-cost stretchable transistors are printed carbon nanotubes (CNTs). However, a majo ... Full text Cite

Cross-Plane Carrier Transport in Van der Waals Layered Materials.

Journal Article Small (Weinheim an der Bergstrasse, Germany) · May 2018 The mechanisms of carrier transport in the cross-plane crystal orientation of transition metal dichalcogenides are examined. The study of in-plane electronic properties of these van der Waals compounds has been the main research focus in recent years. Howe ... Full text Cite

In-Place Printing of Carbon Nanotube Transistors at Low Temperature

Journal Article ACS Applied Nano Materials · April 27, 2018 Interest in flexible, stretchable, and wearable electronics has motivated the development of additive printing to fabricate customizable devices and systems directly onto virtually any surface. However, progress has been limited by the relatively high temp ... Full text Cite

Realizing ferroelectric Hf0.5Zr0.5O2 with elemental capping layers

Journal Article Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics · January 1, 2018 Hafnium zirconium oxide (Hf0.5Zr0.5O2 or HZO) thin films show great promise for enabling ferroelectric field-effect transistors (FeFETs) for memory applications and negative capacitance FETs for low-power digital devices. One challenge in the integration o ... Full text Cite

Fully printed and flexible carbon nanotube transistors designed for environmental pressure sensing and aimed at smart tire applications

Conference Proceedings of IEEE Sensors · December 21, 2017 As the sensor infrastructure needed to facilitate the internet-of-things (IoT) rapidly expands, printed electronics have been identified as a key approach for providing low-cost, ubiquitous sensor networks. In this work, we demonstrate the use of a fully p ... Full text Cite

75 years of the Device Research Conference - A history worth repeating

Journal Article IEEE Journal of the Electron Devices Society · December 5, 2017 At a time when the scientific community is overrun with conferences, workshops, and congresses to discuss all facets of innovation, much can be learned from considering a meeting that has withstood the test of time: the Device Research Conference (DRC). Th ... Full text Cite

Additive engineering for high-performance room-temperature-processed perovskite absorbers with micron-size grains and microsecond-range carrier lifetimes

Journal Article Energy and Environmental Science · November 1, 2017 Perovskite photovoltaics have attracted remarkable attention recently due to their exceptional power conversion efficiencies (PCE). State-of-the-art perovskite absorbers typically require thermal annealing steps for high film quality. However, the annealin ... Full text Cite

Sustained Sub-60 mV/decade Switching via the Negative Capacitance Effect in MoS₂ Transistors.

Journal Article Nano letters · August 2017 It has been shown that a ferroelectric material integrated into the gate stack of a transistor can create an effective negative capacitance (NC) that allows the device to overcome "Boltzmann tyranny". While this switching below the thermal limit has been o ... Full text Cite

Edge contacts to multilayer MoS2 using in situ Ar ion beam

Conference Device Research Conference - Conference Digest, DRC · August 1, 2017 The dimensional scaling of transistors has been a continuous effort for decades. For devices at the sub-5 nm scale, two-dimensional transition metal dichalcogenides, including MoS2, show great promise for preserving electrostatic control and performance. N ... Full text Cite

Integration of 3.4 nm HfO2 into the gate stack of MOS2 and WSe2 top-gate field-effect transistors

Conference Device Research Conference - Conference Digest, DRC · August 1, 2017 One of the main challenges inhibiting the integration of 2D crystals into top-gate field-effect transistors (FETs) is deposition of a uniform, scalable, high-quality dielectric. The most common and controlled method of deposition of thin dielectric films i ... Full text Cite

MoS2 negative capacitance FETs with CMOS-compatible hafnium zirconium oxide

Conference Device Research Conference - Conference Digest, DRC · August 1, 2017 The attractiveness of negative capacitance field-effect transistors (NC-FETs) stems from their ability to enable a subthreshold swing (SS) below the 60 mV/decade thermal limit at room temperature - a direct effect of the step-up voltage amplifier behavior ... Full text Cite

Fully printed memristors from Cu-SiO2 core-shell nanowire composites

Conference Device Research Conference - Conference Digest, DRC · August 1, 2017 An area of printed electronics in which additional development is necessary is printable non-volatile memory, which will be essential for the development of fully printed RFID tags and sensors with integrated data storage.[1] An approach to making a printa ... Full text Cite

Scaling, stacking, and printing: How 1D and 2D nanomaterials still hold promise for a new era of electronics

Conference Digest of Technical Papers - Symposium on VLSI Technology · July 31, 2017 1D and 2D nanomaterials continue to show promise for use in electronic devices. Their atomically thin size and superb transport properties make them of great value for transistors scaled in size and, more importantly, in voltage. Meanwhile, their substrate ... Full text Cite

Noninvasive material thickness detection by aerosol jet printed sensors enhanced through metallic carbon nanotube ink

Journal Article IEEE Sensors Journal · July 15, 2017 Demand for cheaper and more functional sensors continues to rise in an era when data can be used to improve health, safety, and efficiency in daily lives. In this paper, we present a fully printed sensor capable of noninvasive material thickness detection. ... Full text Cite

Fully Printed Memristors from Cu–SiO2 Core–Shell Nanowire Composites

Journal Article Journal of Electronic Materials · July 1, 2017 This article describes a fully printed memory in which a composite of Cu–SiO2 nanowires dispersed in ethylcellulose acts as a resistive switch between printed Cu and Au electrodes. A 16-cell crossbar array of these memristors was printed with an aerosol je ... Full text Cite

Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS₂ Using Plasma-Enhanced Atomic Layer Deposition.

Journal Article ACS applied materials & interfaces · July 2017 Regardless of the application, MoS2 requires encapsulation or passivation with a high-quality dielectric, whether as an integral aspect of the device (as with top-gated field-effect transistors (FETs)) or for protection from ambient conditions. ... Full text Cite

Completely Printed, Flexible, Stable, and Hysteresis-Free Carbon Nanotube Thin-Film Transistors via Aerosol Jet Printing

Journal Article Advanced Electronic Materials · May 1, 2017 Nanomaterials offer an attractive solution to the challenges faced for low-cost printed electronics, with applications ranging from additively manufactured sensors to wearables. This study reports hysteresis-free carbon nanotube thin-film transistor (CNT-T ... Full text Cite

Modification of Silver/Single-Wall Carbon Nanotube Electrical Contact Interfaces via Ion Irradiation.

Journal Article ACS applied materials & interfaces · March 2017 Introduction of defects via ion irradiation ex situ to modify silver/single-wall carbon nanotube (Ag-SWCNT) electrical contacts and the resulting changes in the electrical properties were studied. Two test samples were fabricated by depositing 0.1 μm Ag on ... Full text Cite

Poly(oligo(ethylene glycol) methyl ether methacrylate) Brushes on High-κ Metal Oxide Dielectric Surfaces for Bioelectrical Environments.

Journal Article ACS applied materials & interfaces · February 2017 Advances in electronics and life sciences have generated interest in "lab-on-a-chip" systems utilizing complementary metal oxide semiconductor (CMOS) circuitry for low-power, portable, and cost-effective biosensing platforms. Here, we present a simple and ... Full text Cite

Enabling Ultrasensitive Photo-detection Through Control of Interface Properties in Molybdenum Disulfide Atomic Layers.

Journal Article Scientific reports · December 2016 The interfaces in devices made of two-dimensional materials such as MoS2 can effectively control their optoelectronic performance. However, the extent and nature of these deterministic interactions are not fully understood. Here, we investigate ... Full text Cite

Modifying the Ni-MoS2 Contact Interface Using a Broad-Beam Ion Source

Journal Article IEEE Electron Device Letters · September 1, 2016 Charge transport at the contacts is a dominant factor in determining the performance of devices using 2D MoS2. Using a low-energy beam of Ar ions, the interface between Ni and MoS2 was modified to improve the performance in 2D field-effect transistors (FET ... Full text Cite

Sub-60 mV/decade switching in 2D negative capacitance field-effect transistors with integrated ferroelectric polymer

Journal Article Applied Physics Letters · August 29, 2016 There is a rising interest in employing the negative capacitance (NC) effect to achieve sub-60 mV/decade (below the thermal limit) switching in field-effect transistors (FETs). The NC effect, which is an effectual amplification of the applied gate potentia ... Full text Cite

Using Ar Ion beam exposure to improve contact resistance in MoS2 FETs

Conference Device Research Conference - Conference Digest, DRC · August 22, 2016 Contact resistance is a dominant factor in the performance of field-effect transistors (FETs) from two-dimensional MoS2. Several techniques have been shown to improve carrier transport at the metal-MoS2 interface, thus lowering the contact resistance. Thes ... Full text Cite

Improving Contact Interfaces in Fully Printed Carbon Nanotube Thin-Film Transistors.

Journal Article ACS nano · May 2016 Single-walled carbon nanotubes (CNTs) printed into thin films have been shown to yield high mobility, thermal conductivity, mechanical flexibility, and chemical stability as semiconducting channels in field-effect, thin-film transistors (TFTs). Printed CNT ... Full text Cite

End-bonded contacts for carbon nanotube transistors with low, size-independent resistance

Journal Article Science · October 2, 2015 Moving beyond the limits of silicon transistors requires both a high-performance channel and high-quality electrical contacts. Carbon nanotubes provide high-performance channels below 10 nanometers, but as with silicon, the increase in contact resistance w ... Full text Cite

Gate-Free Electrical Breakdown of Metallic Pathways in Single-Walled Carbon Nanotube Crossbar Networks.

Journal Article Nano letters · September 2015 Aligned single-walled carbon nanotubes (SWNTs) synthesized by the chemical vapor deposition (CVD) method have exceptional potential for next-generation nanoelectronics. However, the coexistence of semiconducting (s-) and metallic (m-) SWNTs remains a consi ... Full text Cite

A Compact Virtual-Source Model for Carbon Nanotube FETs in the Sub-10-nm Regime-Part I: Intrinsic Elements

Journal Article IEEE Transactions on Electron Devices · September 1, 2015 We present a data-calibrated compact model of carbon nanotube (CNT) FETs (CNTFETs) based on the virtual-source (VS) approach, describing the intrinsic current-voltage and charge-voltage characteristics. The features of the model include: 1) carrier VS velo ... Full text Cite

A compact virtual-source model for carbon nanotube FETs in the sub-10-nm regime - Part II: Extrinsic elements, performance assessment, and design optimization

Journal Article IEEE Transactions on Electron Devices · September 1, 2015 We present a data-calibrated compact model of carbon nanotube (CNT) FETs (CNFETs), including contact resistance, direct source-to-drain, and band-to-band tunneling currents. The model captures the effects of dimensional scaling and performance degradations ... Full text Cite

DEVICE TECHNOLOGY. Nanomaterials in transistors: From high-performance to thin-film applications.

Journal Article Science (New York, N.Y.) · August 2015 For more than 50 years, silicon transistors have been continuously shrunk to meet the projections of Moore's law but are now reaching fundamental limits on speed and power use. With these limits at hand, nanomaterials offer great promise for improving tran ... Full text Cite

Carbon Nanotube Electronics

Chapter · January 27, 2015 Among the options for a field-effect transistor (FET) channel that can outperform silicon at low voltages, the single-walled carbon nanotube (CNT) is a strong contender. Composed of a single atomic layer of hexagonally arranged carbon atoms that form a cyl ... Full text Cite

Toward high-performance digital logic technology with carbon nanotubes

Journal Article ACS Nano · September 23, 2014 The slow-down in traditional silicon complementary metal-oxide-semiconductor (CMOS) scaling (Moores law) has created an opportunity for a disruptive innovation to bring the semiconductor industry into a postsilicon era. Due to their ultrathin body and ball ... Full text Cite

Achieving low-voltage thin-film transistors using carbon nanotubes

Journal Article Applied Physics Letters · August 11, 2014 The potential to perform at low voltages is a unique feature of carbon nanotube thin-film transistors (CNT-TFTs) when compared to more common TFT material options, such as amorphous Si or organic films. In this work, CNT-TFTs are fabricated using high-puri ... Full text Cite

Defining and overcoming the contact resistance challenge in scaled carbon nanotube transistors.

Journal Article ACS nano · July 2014 Carbon nanotubes (CNTs) continue to show strong promise as the channel material for an aggressively scaled, high-performance transistor technology. However, there has been concern regarding the contact resistance (Rc) in CNT field-effect transistors (CNTFE ... Full text Cite

Defining and overcoming the contact resistance challenge in scaled carbon nanotube transistors

Conference Device Research Conference - Conference Digest, DRC · January 1, 2014 Single-walled carbon nanotubes (CNTs) offer attractive performance benefits as the channel material for aggressively scaled digital transistors that operate at low voltages. Progress continues to be made resolving the materials challenges of CNT purificati ... Full text Cite

High-performance air-stable n-type carbon nanotube transistors with erbium contacts

Journal Article ACS Nano · September 24, 2013 So far, realization of reproducible n-type carbon nanotube (CNT) transistors suitable for integrated digital applications has been a difficult task. In this work, hundreds of n-type CNT transistors from three different low work function metals - erbium, la ... Full text Cite

Electronics: The road to carbon nanotube transistors

Journal Article Nature · July 8, 2013 Full text Cite

Carbon nanotube complementary wrap-gate transistors

Journal Article Nano Letters · June 12, 2013 Among the challenges hindering the integration of carbon nanotube (CNT) transistors in digital technology are the lack of a scalable self-aligned gate and complementary n- and p-type devices. We report CNT transistors with self-aligned gates scaled down to ... Full text Cite

Compact model for carbon nanotube field-effect transistors including nonidealities and calibrated with experimental data down to 9-nm gate length

Journal Article IEEE Transactions on Electron Devices · May 15, 2013 A semianalytical carbon nanotube field-effect transistor (CNFET) model based on the virtual-source model is presented, which includes series resistance, parasitic capacitance, and direct source-to-drain tunneling leakage. The model is calibrated with recen ... Full text Cite

Reducing contact resistance in graphene devices through contact area patterning.

Journal Article ACS nano · April 2013 Performance of graphene electronics is limited by contact resistance associated with the metal-graphene (M-G) interface, where unique transport challenges arise as carriers are injected from a 3D metal into a 2D-graphene sheet. In this work, enhanced carri ... Full text Cite

High purity isolation and quantification of semiconducting carbon nanotubes via column chromatography.

Journal Article ACS nano · April 2013 The isolation of semiconducting carbon nanotubes (CNTs) to ultrahigh (ppb) purity is a prerequisite for their integration into high-performance electronic devices. Here, a method employing column chromatography is used to isolate semiconducting nanotubes t ... Full text Cite

Stacking graphene channels in parallel for enhanced performance with the same footprint

Journal Article IEEE Electron Device Letters · February 22, 2013 Using the unique ability of graphene to be transferred to virtually any surface, field-effect transistors are demonstrated with vertically stacked graphene channels that are electrically connected in parallel. The graphene in each layer is double gated, wi ... Full text Cite

Consistently low subthreshold swing in carbon nanotube transistors using lanthanum oxide

Journal Article Applied Physics Letters · January 7, 2013 While a few singular reports have demonstrated carbon nanotube (CNT) transistors with subthreshold swings (SS) close to the theoretical limit (60 mV/decade), the majority of devices have more than double the target swing. Here, we show that a low temperatu ... Full text Cite

Scalable and fully self-aligned n-type carbon nanotube transistors with gate-all-around

Conference Technical Digest - International Electron Devices Meeting, IEDM · December 1, 2012 While proven to provide high performance at sub-10 nm lengths, carbon nanotube (CNT) field-effect transistors (FETs) typically employ impractical gate geometries. Here we demonstrate fully self-aligned CNTFETs that include a gate-all-around (GAA) the nanot ... Full text Cite

Evaluation of field-effect mobility and contact resistance of transistors that use solution-processed single-walled carbon nanotubes

Journal Article ACS Nano · July 24, 2012 Solution-processed single-walled carbon nanotubes (SWNTs) offer many unique processing advantages over nanotubes grown by the chemical vapor deposition (CVD) method, including capabilities of separating the nanotubes by electronic type and depositing them ... Full text Cite

Current saturation in submicrometer graphene transistors with thin gate dielectric: experiment, simulation, and theory.

Journal Article ACS nano · June 2012 Recently, graphene field-effect transistors (FET) with cutoff frequencies (f(T)) between 100 and 300 GHz have been reported; however, the devices showed very weak drain current saturation, leading to an undesirably high output conductance (g(ds)= dI(ds)/dV ... Full text Cite

Variability in carbon nanotube transistors: Improving device-to-device consistency

Journal Article ACS Nano · February 28, 2012 The large amount of hysteresis and threshold voltage variation in carbon nanotube transistors impedes their use in highly integrated digital applications. The origin of this variability is elucidated by employing a top-coated, hydrophobic monolayer to pass ... Full text Cite

Sub-10 nm carbon nanotube transistor.

Journal Article Nano letters · February 2012 Although carbon nanotube (CNT) transistors have been promoted for years as a replacement for silicon technology, there is limited theoretical work and no experimental reports on how nanotubes will perform at sub-10 nm channel lengths. In this manuscript, w ... Full text Cite

High-density integration of carbon nanotubes via chemical self-assembly

Journal Article Nature Nanotechnology · January 1, 2012 Carbon nanotubes have potential in the development of high-speed and power-efficient logic applications1-7. However, for such technologies to be viable, a high density of semiconducting nanotubes must be placed at precise locations on a substrate. Here, we ... Full text Cite

Double contacts for improved performance of graphene transistors

Journal Article IEEE Electron Device Letters · January 1, 2012 A new double-contact geometry for graphene devices is studied and compared to traditional top contacts. Double contacts consist of metal below and above the graphene in a sandwich-type configuration. Four-probe structures were tested for both single-layer ... Full text Cite

Sub-10 nm carbon nanotube transistor

Conference Technical Digest - International Electron Devices Meeting, IEDM · December 1, 2011 This first demonstration of CNT transistors with channel lengths down to 9 nm shows substantially better scaling behavior than theoretically expected. Numerical simulations suggest that a possible explanation for the surprisingly good performance is a resu ... Full text Cite

Graphene technology with inverted-T gate and RF passives on 200 mm platform

Conference Technical Digest - International Electron Devices Meeting, IEDM · December 1, 2011 Wafer-scale graphene devices processed entirely in a standard 200 mm silicon fab are demonstrated for the first time. New embedded gate structures enable full saturation of the drain current in graphene FETs with sub-μm channels, resulting in high intrinsi ... Full text Cite

High device yield carbon nanotube NFETs for high-performance logic applications

Conference Technical Digest - International Electron Devices Meeting, IEDM · December 1, 2011 We present the first analysis of device yield and material composition for several low work-function metal contacts to carbon nanotubes (CNT), including the first demonstration of high-performance n-channel field-effect transistors (NFET) from erbium (Er) ... Full text Cite

High-frequency graphene voltage amplifier

Journal Article Nano Letters · September 14, 2011 While graphene transistors have proven capable of delivering gigahertz-range cutoff frequencies, applying the devices to RF circuits has been largely hindered by the lack of current saturation in the zero band gap graphene. Herein, the first high-frequency ... Full text Cite

Effects of nanoscale contacts to graphene

Journal Article IEEE Electron Device Letters · August 1, 2011 Understanding and optimizing transport between metal contacts and graphene is one of the foremost challenges for graphene devices. In this letter, we present the first results on the effects of reducing contact dimensions to the nanoscale in single-layer g ... Full text Cite

Wafer scale fabrication of carbon nanotube FETs with embedded poly-gates

Conference Technical Digest - International Electron Devices Meeting, IEDM · December 1, 2010 One critical factor that determines the feasibility of employing carbon nanotubes as channel materials for post-silicon logic devices is the process compatibility to the current CMOS process flow. We show a wafer-scale integration scheme of carbon nanotube ... Full text Cite

Channel and contact length scaling in carbon nanotube transistors

Conference Device Research Conference - Conference Digest, DRC · October 11, 2010 In order to consider single-walled carbon nanotubes (SWCNTs) for a future technology their physical scaling limits must be understood. Such scaling involves shrinking two critical lengths: 1) the channel length (Lg) and 2) the less-emphasized source/drain ... Full text Cite

Current scaling in aligned carbon nanotube array transistors with local bottom gating

Journal Article IEEE Electron Device Letters · July 1, 2010 A local-bottom-gate (LBG) configuration is introduced for carbon nanotube array field-effect transistors (FETs) (CNTFETs). CNTFETs from highly aligned nanotubes are demonstrated and exhibit the best performance to date, with current density >40μA/μm (with ... Full text Cite

Shot noise thermometry for thermal characterization of templated carbon nanotubes

Journal Article IEEE Transactions on Components and Packaging Technologies · March 1, 2010 A carbon nanotube (CNT) thermometer that operates on the principles of electrical shot noise is reported. Shot noise thermometry is a self-calibrating measurement technique that relates statistical fluctuations in dc current across a device to temperature. ... Full text Cite

Length scaling of carbon nanotube transistors

Journal Article Nature Nanotechnology · January 1, 2010 Carbon nanotube field-effect transistors are strong candidates in replacing or supplementing silicon technology. Although theoretical studies have projected that nanotube transistors will perform well at nanoscale device dimensions1-4, most experimental st ... Full text Cite

Photo- and thermionic emission from potassium-intercalated carbon nanotube arrays

Journal Article Journal of Vacuum Science and Technology B · January 1, 2010 Carbon nanotubes (CNTs) are promising candidates to create new thermionic- and photoemission materials. Intercalation of CNTs with alkali metals, such as potassium, greatly reduces their work functions, and the low electron scattering rates of small-diamet ... Full text Cite

Can carbon nanotube transistors be scaled without performance degradation?

Conference Technical Digest - International Electron Devices Meeting, IEDM · December 1, 2009 The effects of channel length scaling on carbon nanotube field-effect transistor (CNTFET) performance was investigated by varying device lengths on the same nanotube. Results show that scaling improves performance with substantial increases in on-current, ... Full text Cite

Photo-and thermionic emission from potassium-intercalated single-walled carbon nanotube arrays

Conference 2008 Proceedings of 3rd Energy Nanotechnology International Conference, ENIC 2008 · October 19, 2009 Vacuum thermionic electron emission has been considered for many years as a means to convert heat or solar energy directly into electrical power. However, an emitter material has not yet been identified that has a sufficiently low work function and that is ... Cite

Vertical carbon nanotube devices with nanoscale lengths controlled without lithography

Journal Article IEEE Transactions on Nanotechnology · July 1, 2009 Vertical single-walled carbon nanotubes (v-SWCNTs) are synthesized within highly ordered porous anodic alumina (PAA) templates supported on Si substrates. A process for obtaining thin-film PAA with long-range ordered nanopores is presented in this paper. E ... Full text Cite

Toward surround gates on vertical single-walled carbon nanotube devices

Journal Article Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures · April 20, 2009 The one-dimensional, cylindrical nature of single-walled carbon nanotubes (SWCNTs) suggests that the ideal gating geometry for nanotube field-effect transistors (FETs) is a surround gate (SG). Using vertical SWCNTs templated in porous anodic alumina, SGs a ... Full text Cite

Electrochemical biosensor of nanocube-augmented carbon nanotube networks.

Journal Article ACS nano · January 2009 Networks of single-walled carbon nanotubes (SWCNTs) decorated with Au-coated Pd (Au/Pd) nanocubes are employed as electrochemical biosensors that exhibit excellent sensitivity (2.6 mA mM(-1) cm(-2)) and a low estimated detection limit (2.3 nM) at a signal- ... Full text Cite

Extraordinary sensitivity of the electronic structure and properties of single-walled carbon nanotubes to molecular charge-transfer

Journal Article Journal of Physical Chemistry C · August 28, 2008 Interaction of single-walled carbon nanotubes with electron-donor and -acceptor molecules causes significant changes in the electronic and Raman spectra. Electron-donating molecules such as tetrathiafulvalene and aniline cause changes opposite to those cau ... Full text Cite

Highly ordered diamond and hybrid triangle-diamond patterns in porous anodic alumina thin films

Journal Article Applied Physics Letters · August 15, 2008 Utilizing nonequilibrium formation kinetics in porous anodic alumina (PAA) thin films, diamond and hybrid triangle-diamond pore patterns are achieved. During anodization, the self-compensation abilities of PAA allow diamond-shaped pores to form by omitting ... Full text Cite

Independently addressable fields of porous anodic alumina embedded in Si O2 on Si

Journal Article Applied Physics Letters · January 16, 2008 Fields of thin-film porous anodic alumina (PAA) are fabricated within a Si O2 support and on independently addressable underlying metal pads. The underlying metallization provides a means for unique postprocessing to be performed on the PAA fields. Customi ... Full text Cite

Optimization of carbon nanotube synthesis from porous anodic Al-Fe-Al templates

Journal Article Carbon · October 1, 2007 A parametric study of carbon nanotube (CNT) synthesis from catalytically active porous anodic Al-Fe-Al multilayer templates was conducted with respect to pore aspect ratio, Fe layer thickness, CNT synthesis temperature, and pre-anodization thermal annealin ... Full text Cite

Controlled decoration of single-walled carbon nanotubes with Pd nanocubes

Journal Article Journal of Physical Chemistry C · September 20, 2007 Although there have been many reports of nanoparticle-decorated single-walled carbon nanotubes (SWCNTs), the morphology of the resulting nanoparticles has lacked consistency and control. The present work demonstrates a process for decorating SWCNTs with Pd ... Full text Cite

In-place fabrication of nanowire electrode arrays for vertical nanoelectronics on Si substrates

Journal Article Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures · April 8, 2007 Vertical arrays of Pd nanowire electrodes with controllable and reproducible diameters and lengths are fabricated using a porous anodic alumina (PAA) template supported on a metallized Si substrate. The process described here employs a hydrogen plasma to p ... Full text Cite

Lithography-free in situ Pd contacts to templated single-walled carbon nanotubes

Journal Article Nano Letters · December 1, 2006 We report a metalization technique for electrically addressing templated vertical single-walled carbon nanotubes (SWNTs) using in situ palladium (Pd) nanowires, SWNTs are synthesized from an embedded catalyst in a modified porous anodic alumina (PAA) templ ... Full text Cite

Vertical single- and double-walled carbon nanotubes grown from modified porous anodic alumina templates

Journal Article Nanotechnology · August 14, 2006 Vertical single-walled and double-walled carbon nanotube (SWNT and DWNT) arrays have been grown using a catalyst embedded within the pore walls of a porous anodic alumina (PAA) template. The initial film structure consisted of a SiOx adhesion layer, a Ti l ... Full text Cite